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IXDS430 の電気的特性と機能

IXDS430のメーカーはIXYS Corporationです、この部品の機能は「(IXDx430) 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXDS430
部品説明 (IXDx430) 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXDS430 Datasheet, IXDS430 PDF,ピン配置, 機能
IXDN430 / IXDI430 / IXDD430 / IXDS430
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected
• High Peak Output Current: 30A Peak
• Wide Operating Range: 8.5V to 35V
• Under Voltage Lockout Protection
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 5600 pF in <25ns
www.DataSheeMt4aUt.cchomed Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON / OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Limiting di/dt Under Short Circuit
• Class D Switching Amplifiers
General Description
The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high
current gate drivers specifically designed to drive MOSFETs
and IGBTs to their minimum switching time and maximum
practical frequency limits. The IXD_430 can source and sink
30A of peak current while producing voltage rise and fall times
of less than 30ns. The input of the drivers are compatible with
TTL or CMOS and are fully immune to latch up over the entire
operating range. Designed with small internal delays, cross
conduction/current shoot-through is virtually eliminated in all
configurations. Their features and wide safety margin in
operating voltage and power make the drivers unmatched in
performance and value.
The IXD_430 incorporates a unique ability to disable the output
under fault conditions. The standard undervoltage lockout is at
12.5V which can also be set to 8.5V in the IXDS430SI. When a
logical low is forced into the Enable inputs, both final output
stage MOSFETs (NMOS and PMOS) are turned off. As a
result, the output of the IXDD430 enters a tristate mode and
enables a Soft Turn-Off of the MOSFET when a short circuit is
detected. This helps prevent damage that could occur to the
MOSFET if it were to be switched off abruptly due to a dv/dt
over-voltage transient.
The IXDN430 is configured as a noninverting gate driver, and the
IXDI430 is an inverting gate driver. The IXDS430 can be configured
either as a noninverting or inverting driver. The IXD_430 are available
in the standard 28-pin SIOC (SI-CT), 5-pin TO-220 (CI), and in the
TO-263 (YI) surface mount packages. CT or 'Cool Tab' for the 28-
pin SOIC package refers to the backside metal heatsink tab.
Ordering Information
Part Num ber
Package Type
IX D D 4 3 0 Y I
5-pin TO -263
IX D D 4 3 0 C I
5-pin TO -220
IX D I4 3 0 Y I
5-pin TO -263
IX D I4 3 0 C I
5-pin TO -220
IX D N 4 3 0 Y I
5-pin TO -263
IX D N 4 3 0 C I
5-pin TO -220
IX D S 4 3 0 S I
28-pin S O IC
Temp. Range
-55°C to +125°
C o n fig u ra tio n
N on Inverting with
E nable
-55°C to +125°
In v e rtin g
-55°C to +125°
N on Inverting
-55°C to +125°
Inverting / N on
Inverting w ith E nable
and UVSEL
Copyright © IXYS CORPORATION 2004
First Release
DS99045B(8/04)

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IXDS430 pdf, ピン配列
Absolute Maximum Ratings (Note 1)
Parameter
Value
Supply Voltage
40 V
All Other Pins
-0.3 V to VCC + 0.3 V
Power Dissipation, TAMBIENT 25 oC
TO220 (CI), TO263 (YI)
2W
Derating Factors (to Ambient)
TO220 (CI), TO263 (YI)
0.016W/oC
Storage Temperature
-65 oC to 150 oC
Lead Temperature (10 sec)
300 oC
IXDN430 / IXDI430 / IXDD430 / IXDS430
Operating Ratings
Param eter
Value
Maxim um Junction Tem perature
150 oC
Operating Tem perature Range
-55 oC to 125 oC
Therm al Im pedance TO 220 (CI), TO263 (YI)
θJC (Junction To Case)
0.95 oC/W
θJA (Junction To Am bient)
62.5 oC/W
Therm al Im pedance 28 pin SOIC with Heat Slug (SI)
θJC (Junction To Case)
3 oC/W
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 8.5V VCC 35V .
All voltage measurements with respect to GND. IXDD430 configured as described in Test Conditions.
www.DataSheSety4mU.cbooml P aram eter
Test Conditions
M in
VIH High input voltage
4.5V VCC 18V
VIL Low input v oltage
4.5V VCC 18V
VIN Input voltage range
IIN Input current
0V VIN VCC
3.5
-5
-10
T yp
Max
0.8
VCC + 0.3
10
Units
V
V
V
µA
VOH
VOL
ROH
ROL
IPEAK
High output voltage
Low output v oltage
Output resistance
@ Output high
Output resistance
@ Output Low
Peak output current
VCC = 18V
VCC = 18V
VCC = 18V
VCC - 0.025
0.3
0.2
30
0.025
0.4
0.3
V
V
A
IDC Continuous output Lim ited by package power
current
dissipation
V EN
Enable voltage range
IXDD430 Only
V ENH
High En Input Voltage
IXDD430 Only
V ENL
Low En Input Voltage
IXDD430 Only
R EN
EN Input Resistance
IXDS430 Only
V INV
INV Voltage Range
IXDS430 Only
V INVH
High INV Input Voltage
IXDS430 Only
V INVL
Low INV Input Voltage
IXDS430 Only
R INV
INV Input Resistance
IXDS430 Only
tR Rise tim e
CL=5600pF Vcc=18V
tF Fall tim e
CL=5600pF Vcc=18V
tONDLY
tOFFDLY
tENOH
tDOLD
VCC
On-tim e propagation
delay
Off-tim e propagation
delay
Enable to output high
delay tim e
Disable to output low
delay tim e
Power supply v oltage
CL=5600pF Vcc=18V
CL=5600pF Vcc=18V
IXDD430 Only, Vcc=18V
IXDD430 Only, Vcc=18V
ICC
Power supply current
VIN = 3.5V
VIN = 0V
VIN = + VCC
Specifications Subject To Change Without Notice
- 0.3
2/3 Vcc
- 0.3
2/3 Vcc
8.5
8A
Vcc + 0.3
V
V
1/3 Vcc
V
400 Kohm
Vcc + 0.3
V
V
1/3 Vcc
V
400 Kohm
18 20 ns
16 18 ns
41 45 ns
35 39 ns
47 ns
120 ns
18 35 V
1 3 mA
0 10 µA
10 µA
Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
3


3Pages


IXDS430 電子部品, 半導体
IXDN430 / IXDI430 / IXDD430 / IXDS430
Typical Performance Characteristics
Fig. 3
35
30
25
20
15
www.DataSheet410U.com
5
0
10
Rise Times vs. Supply Voltage
15 20 25 30
Supply Voltage (V)
15000 pF
10000 pF
5600 pF
1000 pF
35
Fig. 4
30
25
20
15
10
5
0
10
Fall Times vs. Supply Voltage
15 20 25 30
Supply Voltage (V)
15000 pF
10000 pF
5600 pF
1000 pF
35
Fig. 5
30
Output Rise Times vs. Load Capacitance
25
13V
18V
35V
20
15
10
Fig. 6
30
25
20
15
10
5
Output Fall Times vs. Load Capacitance
35V
18V
13V
5
1000
3000
5000
7000
9000
11000
Load Capacitance (pF)
13000
15000
Fig. 7
25
Rise and Fall Times vs. Temperature
CL = 5600 pF, Vcc = 18V
20 tR
15
tF
10
5
0
-60 -10 40 90 140 190
Temperature (C)
0
1000
3000
5000
7000
9000 11000
Load Capacitance (pF)
13000
15000
Fig. 8
4
3.5
3
2.5
2
1.5
1
0.5
0
-60
Max / Min Input vs. Temperature
CL = 5600pF, Vcc = 18V
Max Input Low
Min Input High
-10 40 90 140
Temperature (C)
190
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部品番号部品説明メーカ
IXDS430

(IXDx430) 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

IXYS Corporation
IXYS Corporation


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