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PDF IXSH15N120BD1 Data sheet ( Hoja de datos )
| Número de pieza | IXSH15N120BD1 | |
| Descripción | Improved SCSOA Capability | |
| Fabricantes | IXYS Corporation | |
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HIGH Voltage IGBT
with Diode
IXSH 15N120BD1
IXST 15N120BD1
"S" Series - Improved SCSOA Capability
IC25
VCES
VCE(sat)
= 30 A
= 1200 V
= 3.4 V
Preliminary data
www.DataSheetS4Uym.cobmol
Test Conditions
Maximum Ratings
VCES
VCGR
V
GES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
1200
1200
±20
±30
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
30
15
60
V=
GE
15
V,
T
J
=
125°C,
R
G
=
10
W
Clamped inductive load
I = 40
CM
@ 0.8 VCES
TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W
Non repetitive
10
V
V
V
V
A
A
A
A
ms
PC TC = 25°C
T
J
TJM
T
stg
Md Mounting torque
(TO-247)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering (TO-268)
Weight
TO-247
TO-268
150 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
260 °C
6g
4g
Symbol
BVCES
VGE(th)
I
CES
IGES
VCE(sat)
Test Conditions
IC = 1.0 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
V = 0.8 • V
CE CES
Note 1
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Note 2
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
TJ = 125°C
TJ = 125°C
1200
3
V
6V
50 mA
2.5 mA
±100 nA
3.0 3.4 V
2.8 V
TO-247 AD (IXSH)
G
C
E
TO-268 ( IXST)
G
E
(TAB)
(TAB)
Features
• High Blocking Voltage
• Epitaxial Silicon drift region
- fast switching
- small tail current
- low switching losses
• MOS gate turn-on for drive simplicity
• Molding epoxies meet UL 94 V-0
flammability classification
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98708A (7/00)
1-2
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| PDF Descargar | [ Datasheet IXSH15N120BD1.PDF ] | |
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