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IXSN80N60BD1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXSN80N60BD1
部品説明 High Current IGBT
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXSN80N60BD1 Datasheet, IXSN80N60BD1 PDF,ピン配置, 機能
IGBT with Diode
Short Circuit SOA Capability
IXSN 80N60BD1
C
VCES
IC25
VCE(sat)
tfi
= 600 V
= 160 A
= 2.5 V
= 180 ns
Preliminary Data Sheet
G
www.DataSheetS4Uy.mcobmol
Test Conditions
V CES
V CGR
V GES
VGEM
IC25
IL
IC90
I CM
SSOA
(RBSOA)
t
(
SS CC
S
O
A
)
PC
V ISOL
TJ
T JM
T stg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C (Silicon chip capability)
Lead current limit (RMS)
TC = 90°C
TC = 25°C, 1 ms
CVGlaEm= p1e5dVi,nTdVuJc=tiv1e25lo°Cad, RG = 5
RVGGE==
15
22
V,
,
nVoCnE
=re3p6e0titViv,eTJ
=
125°C
TC = 25°C
50/60 Hz
IISOL 1 mA
t = 1 min
t=1s
Mounting torque
EE
Maximum Ratings
600 V
600 A
±20 V
±30 V
160
100
80
300
@IC0M.8=
160
VCES
10
A
A
A
A
A
µs
420 W
2500
3000
V~
V~
-55 ... +150
150
-55 ... +150
°C
°C
°C
0.4/6 Nm/lb.in.
30 g
Symbol
B V CES
V GE(th)
I CES
I GES
VCE(sat)
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
IC = 500 µA, VGE = 0 V
IC = 8 mA, VCE = VGE
VVGCEE
=
=
0VCVES
TTJJ
=
=
25°C
125°C
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V; Note 1
600
4
V
8V
200 µA
2 mA
±200 nA
2.5 V
miniBLOC, SOT-227 B
E153432 E
G
E = Emitter c,
G = Gate,
E
C
C = Collector
E = Emitter c
c Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
z International standard package
z Aluminium-nitride isolation
- high power dissipation
z Isolation voltage 3000 V~
z UL registered E 153432
z Low VCE(sat)
- for minimum on-state conduction
losses
z Fast Recovery Epitaxial Diode
- short trr and IRM
z Low collector-to-case capacitance
(< 60 pF)
- reduced RFI
z Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switch-mode and resonant-mode
power supplies
Advantages
z Space savings
z Easy to mount with 2 screws
z High power density
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
DS98890A(05/04)

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IXSN80N60BD1

High Current IGBT

IXYS Corporation
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