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IXSN62N60U1 の電気的特性と機能

IXSN62N60U1のメーカーはIXYS Corporationです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXSN62N60U1
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXSN62N60U1 Datasheet, IXSN62N60U1 PDF,ピン配置, 機能
IGBT with Diode
Short Circuit SOA Capability
IXSN 62N60U1
3
2
V
CES
I
C25
VCE(sat)
= 600 V
= 90 A
= 2.5 V
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Symbol
VCES
V
CGR
VGES
VGEM
IC25
IC90
I
CM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
VISOL
TJ
TJM
Tstg
Md
Weight
Symbol
BV
CES
VGE(th)
I
CES
IGES
VCE(sat)
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MW
Continuous
Transient
TC = 25°C
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
VGE= 15 V, VCE = 360 V, TJ = 125°C
RG = 22 W, non repetitive
TC = 25°C
50/60 Hz
I
ISOL
£
1
mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
41
Maximum Ratings
600
600
±20
±30
90
50
180
ICM = 100
@ 0.8 V
CES
10
V
A
V
V
A
A
A
A
ms
250 W
2500
3000
V~
V~
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Test Conditions
I = 3 mA, V = 0 V
C GE
IC = 4 mA, VCE = VGE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
T
J
=
25°C
TJ = 125°C
600
4
V
8V
750 mA
15 mA
±100 nA
2.5 V
miniBLOC, SOT-227 B
1
2
4
3
1 = Emitter , 3 = Collector
2 = Gate,
4 = Emitter 
 Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
• International standard package
miniBLOC (ISOTOP) compatible
• Aluminium-nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Low VCE(sat)
- for minimum on-state conduction
losses
• Fast Recovery Epitaxial Diode
- short t and I
rr RM
• Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
• Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings
• Easy to mount with 2 screws
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92815I (7/00)
1-2

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部品番号部品説明メーカ
IXSN62N60U1

IGBT ( Insulated Gate Bipolar Transistor )

IXYS Corporation
IXYS Corporation


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