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PDF IXSN52N60AU1 Data sheet ( Hoja de datos )
| Número de pieza | IXSN52N60AU1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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IGBT with Diode
Combi Pack
IXSN 52N60AU1
VCES
IC25
VCE(sat)
= 600 V
= 80 A
= 3V
Short Circuit SOA Capability
3
2
www.DataSheet4U.com
Symbol
VCES
V
CGR
VGES
VGEM
IC25
IC90
I
CM
SSOA
(RBSOA)
tSC
(SCSOA)
P
C
VISOL
TJ
T
JM
Tstg
Md
Weight
Symbol
BVCES
V
GE(th)
I
CES
IGES
V
CE(sat)
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MW
Continuous
Transient
TC = 25°C
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
VGE= 15 V, VCE = 360 V, TJ = 125°C
RG = 22 W, non repetitive
T
C
= 25°C
50/60 Hz
I
ISOL
£
1
mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
41
Maximum Ratings
600
600
±20
±30
80
40
160
ICM = 80
@ 0.8 VCES
10
V
A
V
V
A
A
A
A
ms
250 W
2500
3000
V~
V~
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Test Conditions
IC = 3 mA, VGE = 0 V
I = 4 mA, V = V
C CE GE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = I , V = 15 V
C C90 GE
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
T
J
=
25°C
TJ = 125°C
600
4
V
8V
750 mA
15 mA
±100 nA
3V
miniBLOC, SOT-227 B
1
2
1 = Emitter ,
2 = Gate,
4
3
3 = Collector
4 = Emitter
Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
• International standard package
miniBLOC
• Aluminium-nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Low VCE(sat)
- for minimum on-state conduction
losses
• Fast Recovery Epitaxial Diode
- short t and I
rr RM
• Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
• Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings
• Easy to mount with 2 screws
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92814H(5/97)
1-5
1 page  
IXSN52N60AU1
www.DataSheet4U.com
Fig. 12 Forward current
versus voltage drop.
Fig. 13 Recovery charge versus -diF/dt.
Fig. 14 Peak reverse current versus
-diF/dt.
Fig. 15. Dynamic parameters versus
junction temperature.
Fig. 16 Recovery time versus -di /dt.
F
Fig. 17 Peak forward voltage vs. di /dt.
F
Fig. 18 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXSN52N60AU1.PDF ] | |
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