DataSheet.jp

IXSN35N100U1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXSN35N100U1
部品説明 IGBT
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



Total 6 pages
		

No Preview Available !

IXSN35N100U1 Datasheet, IXSN35N100U1 PDF,ピン配置, 機能
IGBT with Diode IXSN 35N100U1
High Short Circuit SOA Capability
3
2
VCES
IC25
VCE(sat)
= 1000 V
= 38 A
= 3.5 V
Symbol
Test Conditions
www.DataSheet4U.com
VCES
V
CGR
VGES
V
GEM
IC25
IC90
I
CM
SSOA
(RBSOA)
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
M
Continuous
Transient
TC = 25°C
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22
Clamped inductive load, L = 30 µH
t
SC
(SCSOA)
PC
VISOL
T
J
TJM
Tstg
Md
V=
GE
15
V,
V
CE
=
0.6
V,
CES
T
J
=
125°C
RG = 22 , non repetitive
TC = 25°C
50/60 Hz
IISOL 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
Weight
41
Maximum Ratings
1000
1000
±20
±30
38
25
50
ICM = 50
@ 0.8 VCES
10
V
A
V
V
A
A
A
A
µs
205 W
2500
3000
V~
V~
-40 ... +150
150
-40 ... +150
°C
°C
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Symbol
BV
CES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
I = 6 mA, V = 0 V
C GE
IC = 10 mA, VCE = VGE
VCE = 0.8 • VCES
V =0V
GE
V
CE
=
0
V,
V=
GE
±20
V
IC = IC90, VGE = 15 V
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
TJ = 25°C
T
J
=
125°C
1000
5
V
8V
750 µA
15 mA
±500 nA
3.5 V
miniBLOC, SOT-227 B
1
2
1 = Emitter,
2 = Gate,
4
3
3 = Collector
4 = Kelvin Emitter
Features
q International standard package
miniBLOC (ISOTOP) compatible
q Isolation voltage 3000 V~
q 2nd generation HDMOSTM process
- for high short circuit SOA
q Low V
CE(sat)
- for minimum on-state conduction
losses
q MOS Gate turn-on
- drive simplicity
q Fast Recovery Epitaxial Diode
(FRED)
- short t and I
rr RM
q Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
q Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
q AC motor speed control
q DC servo and robot drives
q DC choppers
q Uninterruptible power supplies (UPS)
q Switch-mode and resonant-mode
power supplies
Advantages
q Space savings
q Easy to mount with 2 screws
q High power density
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS Corporation. All rights reserved.
93005C (7/94)
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627

1 Page





ページ 合計 : 6 ページ
PDF
ダウンロード
[ IXSN35N100U1.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IXSN35N100U1

IGBT

IXYS Corporation
IXYS Corporation

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap