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IXSH25N100A の電気的特性と機能

IXSH25N100AのメーカーはIXYS Corporationです、この部品の機能は「Low VCE(sat) IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXSH25N100A
部品説明 Low VCE(sat) IGBT
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXSH25N100A Datasheet, IXSH25N100A PDF,ピン配置, 機能
Low V IGBT
CE(sat)
High Speed IGBT
IXSH/IXSM 25 N100
IXSH/IXSM 25 N100A
VCES
1000 V
1000 V
IC25
50 A
50 A
VCE(sat)
3.5 V
4.0 V
Short Circuit SOA Capability
Symbol
Test Conditions
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Maximum Ratings
VCES
V
CGR
VGES
VGEM
IC25
IC90
I
CM
SSOA
(RBSOA)
tSC
(SCSOA)
P
C
TJ
TJM
Tstg
Md
Weight
g
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
M
Continuous
Transient
1000
1000
±20
±30
V
V
V
V
TC = 25°C
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 4.7
Clamped inductive load, L = 30 µH
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C
RG = 33 Ω, non repetitive
T
C
= 25°C
50
25
100
ICM = 50
@ 0.8 VCES
10
200
-55 ... +150
150
-55 ... +150
A
A
A
A
µs
W
°C
°C
°C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
BV
CES
VGE(th)
ICES
I
GES
V
CE(sat)
I = 3 mA, V = 0 V
C GE
IC = 2.5 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V=
GE
±20
V
I = I , V = 15 V
C C90 GE
TJ = 25°C
TJ = 125°C
25N100
25N100A
1000
5
V
8V
250 µA
1 mA
±100 nA
3.5 V
4.0 V
TO-247 AD (IXSH)
G
C
E
TO-204 AE (IXSM)
G = Gate,
E = Emitter,
C
C = Collector,
TAB = Collector
Features
q International standard packages
q Guaranteed Short Circuit SOA
capability
q Low V
CE(sat)
- for low on-state conduction losses
q High current handling capability
q MOS Gate turn-on
- drive simplicity
q Fast Fall Time for switching speeds
up to 20 kHz
Applications
q AC motor speed control
q Uninterruptible power supplies (UPS)
q Welding
Advantages
q Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q High power density
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
91548F (4/96)
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627

1 Page





IXSH25N100A pdf, ピン配列
Fig. 1 Saturation Characteristics
50
TJ = 25°C
40
VGE = 15V
13V 11V
30
20
www.DataSheet4U1.c0om
0
0
1
23
VCE - Volts
9V
7V
45
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9 TJ = 25°C
8
7
6
5 IC = 50A
4 IC = 25A
3
2 IC = 12.5A
1
0
8 9 10 11 12 13 14 15
VGE - Volts
Fig. 5 Input Admittance
50
VCE = 10V
40
30
20
10
0
5
TJ = 125°C
TJ = 25°C
TJ = - 40°C
6 7 8 9 10 11 12 13 14 15
© IXYS Corporation. All rights VreGsEe-rvVeodl.ts
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXSH 25N100 IXSM 25N100
IXSH 25N100A IXSM 25N100A
Fig. 2
Output Characterstics
180
TJ = 25°C
160
140
120
100
80
60
40
20
0
0246
VGE =15V
13V
11V
9V
7V
8 10 12 14 16 18 20
VCE - Volts
Fig. 4
1.6
VGE = 15V
1.4
Temperature Dependence
of Output Saturation Voltage
IC = 50A
1.2
IC = 25A
1.0
0.8 IC = 12.5A
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
1.2
VGE(th)
IC = 2.5mA
1.1
1.0
0.9 BVCES
IC = 3mA
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627


3Pages


IXSH25N100A 電子部品, 半導体
www.DataSheet4U.com
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627

6 Page



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部品番号部品説明メーカ
IXSH25N100

Low VCE(sat) IGBT

IXYS Corporation
IXYS Corporation
IXSH25N100A

Low VCE(sat) IGBT

IXYS Corporation
IXYS Corporation


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