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IXSK50N60AU1 の電気的特性と機能

IXSK50N60AU1のメーカーはIXYS Corporationです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXSK50N60AU1
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXSK50N60AU1 Datasheet, IXSK50N60AU1 PDF,ピン配置, 機能
IGBT with Diode
Combi Pack
IXSK 50N60AU1
V
CES
IC25
VCE(sat)
= 600 V
= 75 A
= 2.7 V
Short Circuit SOA Capability
Symbol
Test Conditions
www.DataSheet4U.com
VCES
V
CGR
VGES
VGEM
IC25
IC90
I
CM
SSOA
(RBSOA)
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
M
Continuous
Transient
TC = 25°C, limited by leads
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22
Clamped inductive load, L = 30 µH
tSC
(SCSOA)
P
C
TJ
T
JM
Tstg
Md
Weight
VGE= 15 V, VCE = 360 V, TJ = 125°C
RG = 22 Ω, non repetitive
T
C
= 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
600
±20
±30
75
50
200
ICM = 100
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
µs
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
0.9/6 Nm/lb.in.
10 g
300 °C
TO-264 AA
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
q International standard package
JEDEC TO-264 AA
q Guaranteed Short Circuit SOA
capability
q High frequency IGBT and anti-
parallel FRED in one package
q 2nd generation HDMOSTM process
q Low V
CE(sat)
- for minimum on-state conduction
losses
q MOS Gate turn-on
- drive simplicity
q Fast Recovery Epitaxial Diode
(FRED)
- soft recovery with low I
RM
Symbol
Test Conditions
BV
CES
VGE(th)
I = 3 mA, V = 0 V
C GE
IC = 4 mA, VCE = VGE
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
600 V
4 7V
Applications
q AC motor speed control
q DC servo and robot drives
q DC choppers
q Uninterruptible power supplies (UPS)
q Switch-mode and resonant-mode
power supplies
ICES
I
GES
V
CE(sat)
VCE = 0.8 • VCES
V =0V
GE
V
CE
=
0
V,
V=
GE
±20
V
I = I , V = 15 V
C C90 GE
TJ = 25°C
T
J
=
125°C
IXYS reserves the right to change limits, test conditions and dimensions.
750 µA
15 mA
±100 nA
2.7 V
Advantages
q Space savings (two devices in one
package)
q Easy to mount with 1 screw
(isolated mounting screw hole)
q Reduces assembly time and cost
© IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
92822G (4/96)
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627

1 Page





IXSK50N60AU1 pdf, ピン配列
Fig. 1 Saturation Characteristics
80
TJ = 25°C
70
60
50
40
30
20
www.DataSheet41U0.com
0
01
VGE = 15V
13V
11V
23
VCE - Volts
9V
7V
45
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9 TJ = 25°C
8
7
6
5
IC = 80A
4
3 IC = 40A
2
IC = 20A
1
0
8 9 10 11 12 13 14
VGE - Volts
15
Fig. 5 Input Admittance
80
VCE = 10V
70
60
50
40
TJ = 25°C
30
20 TJ = 125°C
TJ = - 40°C
10
0
4 5 6 7 8 9 10 11 12 13
VGE - Volts
© IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXSK 50N60AU1
Fig. 2
Output Characterstics
200
180 TJ = 25°C
160
140
120
100
80
60
40
20
0
024
6
VGE = 15V
13V
11V
9V
7V
8 10 12 14 16 18 20
VCE - Volts
Fig. 4
Temperature Dependence
of Output Saturation Voltage
1.5
1.4 VGE=15V
1.3
IC = 80A
1.2
1.1
IC = 40A
1.0
0.9
IC = 20A
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
1.2 BVCES
IC = 3mA
1.1
1.0
0.9
0.8
0.7
-50 -25 0
VGE8th)
IC = 4mA
25 50 75 100 125 150
TJ - Degrees C
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627


3Pages


IXSK50N60AU1 電子部品, 半導体
www.DataSheet4U.com
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627

6 Page



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部品番号部品説明メーカ
IXSK50N60AU1

IGBT ( Insulated Gate Bipolar Transistor )

IXYS Corporation
IXYS Corporation


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