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IXSA10N60B2D1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXSA10N60B2D1
部品説明 High Speed IGBT
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXSA10N60B2D1 Datasheet, IXSA10N60B2D1 PDF,ピン配置, 機能
High Speed IGBT
with Diode
IXSA 10N60B2D1
IXSP 10N60B2D1
Short Circuit SOA Capability
VCES = 600 V
IC25 = 20 A
VCE(sat) = 2.5 V
Preliminary Data Sheet
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Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
VGES
VGEM
Continuous
Transient
IC25
IC110
IF(110)
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE= 15 V, TJ = 125°C, RG = 82
Clamped inductive load, VGE = 20 V
t(SSCCSOA)
VRGGE
=
=
11550V, V, CnEo=n3r6e0peVti,tiTvJe=
125°C
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic Body t = 10s
Md
Weight
Mounting torque
D1
Maximum Ratings
600
600
± 20
± 30
20
10
11
30
ICM = 20
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
A
µs
100
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
(TO-220)
250 °C
1.3/10 Nm/lb. in
2g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 750 µA, VCE = VGE
VVGCEE
=
=
0VVCES
VCE = 0 V, VGE = ± 20 V
IC = 10A, VGE = 15 V
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise specified)
typ. max.
4.0 7.0 V
75
200
± 100
2.5
µA
µA
nA
V
TO-263 (IXSA)
GE
TO-220AB (IXSP)
C (TAB)
G CE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard packages
• Guaranteed Short Circuit SOA
capability
• L- ofworVloCwE(soatn) -state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
© 2004 IXYS All rights reserved
DS99193A(10/04)

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IXSA10N60B2D1

High Speed IGBT

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