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PDF MT6L67FS Data sheet ( Hoja de datos )

Número de pieza MT6L67FS
Descripción VHF-UHF Band Low Noise Amplifier Application
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! MT6L67FS Hoja de datos, Descripción, Manual

MT6L67FS
TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE
MT6L67FS
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
Two devices are built in to the fine pich small mold package (6pins):fs6
It exsels in the buffer and oscillation use.
Mounted Devices
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Three-pin fSM mold products are corresponded
Q1
MT3S36FS
Q2
MT3S106FS
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector power dissipation
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC (Note 1)
RATING
Q1 Q2
8 13
4.5 6
1.5 1
36 80
18 20
100
110 (Note 2)
UNIT
V
V
V
mA
mA
mW
1.COLLECTOR 1
2.EMITTER1
3.COLLECTOR2
4.BASE2
5.EMITTER2
6.BASE1
fS6
JEDEC
JEITA
TOSHIBA
2-1F1A
Weight: 0.001g (typ.)
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1 : 10 mm2 × 1.0 mm (t) at the time of glass epoxy printed circuit board mounting.
Note 2 : At the time of two-element operation
Marking (top view)
6 54
1J
Pin Assignment (top view)
B1 E2 B2
Q1 Q2
12 3
C1 E1 C2
1 2007-11-01

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