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PDF MT6L58AFS Data sheet ( Hoja de datos )

Número de pieza MT6L58AFS
Descripción VHF-UHF Band Low Noise Amplifier Application
Fabricantes Toshiba Semiconductor 
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MT6L58AFS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L58AFS
VHF~UHF Band Low-Noise Amplifier Applications
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
z Superior noise characteristics
z Superior performance in buffer and oscillator applications.
Mounted Devices
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Corresponding three-pin products:
TESM(fSM) mold products
Q1
MT3S06T
(MT3S06FS)
Q2
MT3S03AT
(MT3S03AFS)
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
fS6
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector- base voltage
Symbol
Rating
Unit
VCBO
10
10 V
1. Collector1 (C1)
2. Emitter1 (E1)
3. Collector2 (C2)
4. Base2 (B2)
5. Emitter2 (E2)
6. Base1 (B1)
Collector- emitter voltage
Emitter- base voltage
Collector current
Base current
Collector power dissipation
VCEO
VEBO
IC
IB
PC(Note 1)
55
1.5 2
15 40
7 10
100
110 (Note 2)
V
V JEDEC
JEIAJ
mA Toshiba
2-1F1A
mA Weight: 0.001g (typ.)
mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Note 2: During two-element operation
Marking (top view)
65
15
12
4
3
Pin Assignment (top view)
654
Q1 Q2
123
1 2007-11-01

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