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PDF MT6L56E Data sheet ( Hoja de datos )
| Número de pieza | MT6L56E | |
| Descripción | VHF-UHF Band Low Noise Amplifier Application | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L56E
VHF-UHF Band Low Noise Amplifier Application
VHF-UHF Band Oscillator Application
MT6L56E
Unit: mm
• Two devices are built into the super-thin and ultra-super-mini (6-pin)
ES6 package.
www.DataSheet4U.com
Mounted Devices
Three-pin (SSM/TESM) product No.
Q1: SSM (TESM)
MT3S07S
(MT3S07T)
Q2: TESM
MT3S08T
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Q1
Q2 Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC (Note 1)
Tj
Tstg
10 20
58
1.5 1.5
25 40
7 10
150
125
−55~125
V
V
V
mA
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2N1C
Weight: 3 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total power dissipation of Q1 and Q2 mounted on the circuit board
Marking
Pin Connections
654
B1 E2 B2
AS
Q1 Q2
123
C1 E1 C2
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MT6L56E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MT6L56E | VHF-UHF Band Low Noise Amplifier Application | Toshiba Semiconductor |
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