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PDF MT6L55E Data sheet ( Hoja de datos )
| Número de pieza | MT6L55E | |
| Descripción | VHF-UHF Band Low Noise Amplifier Application | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MT6L55E (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L55E
VHF-UHF Band Low Noise Amplifier Application
VHF-UHF Band Oscillator Application
MT6L55E
Unit: mm
• Two devices are built into the super-thin and ultra-super-mini (6-pin)
ES6 package.
www.DataSheet4U.com
Mounted Devices
Three-pin (SSM/TESM) product No.
Q1: SSM (TESM)
MT3S07S
(MT3S07T)
Q2: TESM
MT3S05T
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Q1
Q2 Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC (Note 1)
Tj
Tstg
10 10
55
1.5 2
25 40
10 10
150
125
−55~125
V
V
V
mA
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2N1C
Weight: 3 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total power dissipation of Q1 and Q2 mounted on the circuit board
Marking
Pin Connections
654
B1 E2 B2
AR
Q1 Q2
123
C1 E1 C2
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MT6L55E.PDF ] | |
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