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PDF IXGT30N60BU1 Data sheet ( Hoja de datos )
| Número de pieza | IXGT30N60BU1 | |
| Descripción | HiPerFAST IGBT | |
| Fabricantes | IXYS Corporation | |
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HiPerFASTTM IGBT
with Diode
Combi Pack
IXGH 30N60BU1
IXGT 30N60BU1
VCES = 600 V
IC25 = 60 A
VCE(sat) = 1.8 V
tfi = 100 ns
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Symbol
Test Conditions
Maximum Ratings
VCES
V
CGR
VGES
VGEM
I
C25
IC110
I
CM
SSOA
(RBSOA)
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MΩ
Continuous
Transient
T
C
= 25°C
TC = 110°C
T
C
= 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 33 Ω
Clamped inductive load, L = 100 µH
PC TC = 25°C
TJ
TJM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque, TO-247 AD
TO-268
TO-247 AD
600
600
±20
±30
60
30
120
ICM = 60
@ 0.8 VCES
200
-55 ... +150
150
-55 ... +150
300
1.13/10
4
6
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-268
(IXGT)
G
E
TO-247 AD
C (TAB)
G
C
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
High frequency IGBT and antiparallel
FRED in one package
High current handling capability
Newest generation HDMOSTM
process
MOS Gate turn-on
- drive simplicity
Symbol
BVCES
V
GE(th)
ICES
I
GES
VCE(sat)
VCE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
IC = 750µA, VGE = 0 V
BVCES temperature coefficient
I
C
=
250
µA,
V
CE
=
V
GE
VGE(th) temperature coefficient
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 150°C
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC110, VGE = 15 V
IC = IC110, VGE = 15 V
TJ = 150°C
600
0.072
2.5
-0.286
V
%/K
5.5 V
%/K
500 µA
3 mA
±100 nA
1.8 V
2.0 V
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
High power density
Optimized VCE(sat) and switching
speeds for medium frequency
applications
© 2002 IXYS All rights reserved
97501E (02/02)
1 page  
Fig. 12. Forward current
versus voltage drop.
IXGH 30N60BU1
IXGT 30N60BU1
Fig. 13. Recovery charge versus -diF/dt.
Fig. 14. Peak reverse current versus
-diF/dt.
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Fig. 15. Dynamic parameters versus
junction temperature.
Fig. 16. Reverse recovery time vs -diF/dt. Fig. 17. Forward voltage recovery
and time versus -diF/dt.
Fig. 18. Transient thermal resistance junction to case.
© 2002 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXGT30N60BU1.PDF ] | |
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