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PDF IXGH39N60BD1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH39N60BD1 | |
| Descripción | HiPerFAST IGBT | |
| Fabricantes | IXYS Corporation | |
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HiPerFASTTM IGBT
IXGH39N60B
IXGH39N60BD1
IXGT39N60B
IXGT39N60BD1
V
CES
IC25
VCE(sat)
tfi
= 600 V
= 76 A
= 1.7 V
= 200 ns
Preliminary data
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Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 22 Ω
Clamped inductive load
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (M3) TO-247
(D1)
Maximum Ratings
600 V
600 V
±20 V
±30 V
76 A
39 A
152 A
ICM = 76
@ 0.8 VCES
200
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
Test Conditions
BVCES
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VGE = 0 V
IC = 750 µA
IC = 250 µA, VCE = VGE
IC = 500 µA
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
TJ = 125°C
VCE = 0 V, VGE = ±20 V
IC = I90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
39N60B
600
39N60BD1 600
V
39N60B
2.5
39N60BD1 2.5
5.0 V
5.0 V
39N60B
39N60B
39N60BD1
200 µA
1 mA
3 mA
±100 nA
1.7 V
TO-268
(IXGT)
G
E
TO-247 AD
(IXGH)
C (TAB)
G
CE
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
z International standard packages
JEDEC TO-247 AD & TO-268
z High current handling capability
z Newest generation HDMOSTM process
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
© 2003 IXYS All rights reserved
DS97548A(02/03)
1 page  
IXGH39N60B IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
60
A
50
IF 40
TVJ=150°C
30 TVJ=100°C
20
TVJ=25°C
10
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0
0
Fig. 12
1 2 3V
VF
Forward current I versus V
FF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
1000 TVJ= 100°C
nC VR = 300V
800
Qr
600
IF= 60A
IF= 30A
IF= 15A
400
200
30
A
25
IRM
20
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
15
10
5
0
100
Fig. 13
A/µs 1000
-diF/dt
Reverse recovery charge Q
r
versus -di /dt
F
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 14 Peak reverse current I
RM
versus -di /dt
F
90
ns
trr
80
70
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
20
V
VFR
15
TVJ= 100°C
IF = 30A
t
fr
VFR
10
5
1.00
µs
tfr
0.75
0.50
0.25
0.0
0
Fig. 15
40 80 120 °C 160
TVJ
Dynamic parameters Qr, IRM
versus T
VJ
1
K/W
0.1
ZthJC
60
0
Fig. 16
200 400 600 A8/0µ0s 1000
-diF/dt
Recovery time trr versus -diF/dt
0 0.00
0 200 400 600 A80/µ0s 1000
Fig. 17
t
fr
diF/dt
Peak forward voltage VFR and
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.502
2 0.193
3 0.205
0.0052
0.0003
0.0162
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 18 Transient thermal resistance junction to case
© 2003 IXYS All rights reserved
DSEP 29-06
0.1 s
t
1
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| PDF Descargar | [ Datasheet IXGH39N60BD1.PDF ] | |
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