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TB2922HQのメーカーはToshiba Semiconductorです、この部品の機能は「Dual Audio Power Amplifier」です。 |
部品番号 | TB2922HQ |
| |
部品説明 | Dual Audio Power Amplifier | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとTB2922HQダウンロード(pdfファイル)リンクがあります。 Total 15 pages
TB2922HQ
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
TB2922HQ
Dual Audio Power Amplifier
The TB2922HQ is 2ch BTL audio amplifier for TV or home audio
applications.
It includes and the pure complementary P-ch and N-ch DMOS
output stage.
www.DataSheet4UT.choempackage is CPP (Compact Power Package).
It is built-in standby function, muting function various kinds of
protectors.
Weight: 4.04 g (typ.)
Features
• High power output
: POUT (1)= 22 W (typ)
(VCC = 18V, RL = 8 Ω, f = 1 kHz, THD = 10%)
: POUT (2)= 37W (typ)
(VCC = 16V, RL = 4 Ω, f = 1 kHz, THD = 10%)
: POUT (3)= 46W (typ)
(VCC = 26V, RL = 8 Ω, f = 1 kHz, THD = 10%)
: POUTMAX (1)= 72W (typ)
(VCC = 26V, RL = 8 Ω, f = 1 kHz, Max Power)
• Low distortion ratio : THD=0.02% (typ)
• Low noise
: Vno = 0.16 μVrms (typ)
(VCC = 18V, RL = 8 Ω, Rg = 0 Ω, BW = 20 Hz~20 kHz)
• Low outside parts
• Built-in standby switch function (pin 1)
• Built-in muting function (pin 6)
• Built-in various protection circuits:
Thermal shut down, overvoltage, out to GND, out to VCC, out to out short speaker burned
• Operating supply voltage
: VCC (opr) = 9 to 26 V (RL = 8 Ω)
: VCC (opr) = 9 to 18 V (RL = 4 Ω)
Note 1: Install the device correctly. Otherwise, the device or system may be degraded, damaged or even destroyed.
Note 2:
The protection features are intended to avoid output short-circuits or other abnormal conditions temporarily.
It is not guaranteed that they will prevent the IC from being damaged.
Exposure to conditions beyond the guaranteed operating ranges may not activate the protection features,
resulting in an IC damage due to output short-circuits.
Note 3: If HBM ESD(condition; 100pF/1.5kΩ) of under -1900V is applied to pin 2 or pin 4 in case that pin3 is GND,
this product may break down.
1 2007-02-20
1 Page TB2922HQ
Caution and Application Method (Description is made only on the single channel)
1. Voltage Gain Adjustment
This IC has no NF (negative feedback) Pins. Therefore, the voltage gain can not be adjusted, but it makes
the device a space and total costs saver.
Input
Amp. 1
Amp. 2A
www.DataSheet4U.com
Amp. 2B
Figure 1 Block Diagram
The voltage gain of amp.1
: GV1 = 8dB
The voltage gain of amp.2A, B
: GV2 = 20dB
The voltage gain of BTL connection: GV (BTL) = 6dB
Therefore, the total voltage gain is decided by expression below.
GV = GV1 + GV2 + GV (BTL) = 8 + 20 + 6 = 34dB
2. Standby SW Function (pin 1)
By means of controlling pin 1 (standby pin) to
High and Low, the power supply can be set to ON
and OFF. The threshold voltage of pin 1 is set at
about 3 VBE (typ.), and the power supply current is
about 2 μA (typ.) in the standby state.
Control Voltage of Pin 4: VSB
Stand-by
ON
OFF
Power
OFF
ON
VSB (V)
0 to 0.5
2.5 to 6
When changing the time constant of pin 1, check the
pop noise.
ON Power
OFF
10 kΩ
1
VCC
≈ 2 VBE
to BIAS
CUTTING CIRCUIT
Figure 2 With pin 1 set to High,
Power is turned ON
Advantage of Standby SW
(1) Since VCC can directly be controlled to ON or OFF by the microcomputer, the switching relay can be
omitted.
(2) Since the control current is microscopic, the switching relay of small current capacity is satisfactory
for switching.
3 2007-02-20
3Pages Absolute maximum ratings (Ta = 25°C)
TB2922HQ
Characteristics
Symbol
Rating
Unit
DC supply voltage
Operation supply voltage
Power dissipation
Operation temperature
Storage temperature
VCC (DC)
VCC (opr)
PD (Note 4)
Topr
Tstg
28
26
62.5
−40 to 85
−55 to 150
V
V
W
°C
°C
Note 4: Package thermal resistance θj-T = 2°C/W (typ.) (Ta = 25°C, with infinite heat sink)
The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not
www.DataSheetb4eU.ecxocmeeded during operation, even for an instant. If any of these rating would be exceeded during operation, the
device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no
longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage and/or
degradation to any other equipment. Applications using the device should be designed such that each absolute
maximum rating will never be exceeded in any operating conditions. Before using, creating and/or producing
designs, refer to and comply with the precautions and conditions set forth in this documents.
Electrical Characteristics
(unless otherwise specified, VCC = 18 V, f = 1 kHz, RL = 8 Ω, Ta = 25°C)
Characteristics
Quiescent current
Output power
Total harmonic distortion
Voltage gain
Voltage gain ratio
Output noise voltage
Ripple rejection ratio
Cross talk
Output offset voltage
Input resistance
Standby current
Standby control voltage
Mute control voltage
Mute attenuation
Symbol
Test
Circuit
Test Condition
ICCQ
⎯ VIN = 0
POUT (1)
POUT (2)
⎯ THD = 10%
⎯ THD = 10%, RL=4Ω
POUT (3)
⎯ VCC = 26 V, THD = 10%
POUT MAX (1) ⎯ VCC = 26V, Max POWER
THD
⎯ POUT = 4 W
GV ⎯ VOUT = 0.775 Vrms
ΔGV
⎯ VOUT = 0.775 Vrms
VNO
⎯ Rg = 0 Ω, BW = 20 Hz~20 kHz
R.R.
⎯
frip = 100 Hz, Rg = 620 Ω
Vrip = 0.775 Vrms
C.T.
⎯
Rg = 620 Ω
VOUT = 0.775 Vrms
VOFFSET
⎯
⎯
RIN ⎯
⎯
ISB ⎯ Standby condition
VSB H
⎯ POWER: ON
VSB L
⎯ POWER: OFF
VM H
⎯ MUTE: OFF
VM L
⎯ MUTE: ON, R1 = 47 kΩ
ATT M
⎯
MUTE: ON
VOUT = 10 Vrms→Mute: OFF
Min Typ. Max Unit
⎯ 80 150 mA
21 22 ⎯
⎯ 37 ⎯
⎯ 46 ⎯
W
⎯ 72 ⎯
⎯ 0.02 0.20
%
32 34 36
dB
−1.0 0 1.0
dB
⎯ 180 250 μVrms
40 50 ⎯
dB
⎯ 65 ⎯
−250 0 250
⎯ 30 ⎯
⎯ 1 10
2.5 ⎯ 6.0
0 ⎯ 0.5
2.5 ⎯ 6.0
0 ⎯ 0.5
85 100 ⎯
dB
mV
kΩ
μA
V
V
dB
6 2007-02-20
6 Page | |||
ページ | 合計 : 15 ページ | ||
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部品番号 | 部品説明 | メーカ |
TB2922HQ | Dual Audio Power Amplifier | Toshiba Semiconductor |