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PDF IXDP20N60B Data sheet ( Hoja de datos )

Número de pieza IXDP20N60B
Descripción High Voltage IGBT
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXDP20N60B Hoja de datos, Descripción, Manual

High Voltage IGBT
with optional Diode
High Speed,
Low Saturation Voltage
www.DataSheet4U.com
IXDP 20N60 B VCES = 600 V
IXDP 20N60 BD1 IC25
= 32 A
V =CE(sat) typ 2.2 V
C C TO-220 AB
GG
EE
IXDP 20N60B IXDP 20N60B D1
G
C
E
G = Gate,
C = Collector ,
C (TAB)
E = Emitter
TAB = Collector
Symbol
Conditions
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
RBSOA
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 20 kW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 90°C, tp =1 ms
VGE= ±15 V, TJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 µH
tSC
(SCSOA)
PC
VGE= ±15 V, VCE = 600 V, TJ = 125°C
RG = 22 W, non repetitive
TC = 25°C
IGBT
Diode
TJ
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque
Maximum Ratings
600 V
600 V
±20 V
±30 V
32 A
20 A
40 A
ICM = 60
VCEK < VCES
10
A
µs
140
50
-55 ... +150
-55 ... +150
300
W
W
°C
°C
°C
0.4 - 0.6
2
Nm
g
Features
q NPT IGBT technology
q low switching losses
q low tail current
q no latch up
q short circuit capability
q positive temperature coefficient for
easy paralleling
q MOS input, voltage controlled
q optional ultra fast diode
q International standard package
Advantages
q Space savings
q High power density
Typical Applications
q AC motor speed control
q DC servo and robot drives
q DC choppers
q Uninteruptible power supplies (UPS)
q Switch-mode and resonant-mode
power supplies
Symbol
V(BR)CES
VGE(th)
ICES
I
GES
V
CE(sat)
Conditions
VGE = 0 V
IC = 0.4 mA, VCE = VGE
VCE = VCES
V = 0 V, V = ± 20 V
CE GE
I = 20 A, V = 15 V
C GE
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600 V
3 5V
TJ = 25°C
TJ = 125°C
0.1 mA
0.7 mA
± 500 nA
2.2 2.8 V
© 2000 IXYS All rights reserved
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