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STU405D の電気的特性と機能

STU405DのメーカーはSamHop Microelectronicsです、この部品の機能は「Dual N-Channel E nhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 STU405D
部品説明 Dual N-Channel E nhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




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STU405D Datasheet, STU405D PDF,ピン配置, 機能
S TU405D
S amHop Microelectronics C orp.
Nov,24 2005
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID R DS (ON) ( m W ) Max
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40V 16A
30 @ VGS = 10V
40 @ VGS = 4.5V
D1/D2
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
-40V
ID
-12A
R DS (ON) ( m W ) Max
48 @ VGS = -10V
65 @ VGS = -4.5V
D1 D2
S1 G1
D1/D2 S 2 G2
TO-252-5L
G1 G2
S 1 N-ch
S 2 P-ch
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS 40 -40
V
Gate-S ource Voltage
VGS 20 20
V
25 C 16 -12
Drain C urrent-C ontinuous @ Tc
70 C
ID
13.8 -10
-P ulsed a
IDM 50 -50
A
A
A
Drain-S ource Diode Forward C urrent
IS 8 -6 A
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
Tc= 25 C
Tc= 70 C
PD
TJ, TSTG
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
Thermal R esistance, Junction-to-Ambient
R JA
1
11
7.7
-55 to 175
13.6
120
W
C
C /W
C /W

1 Page





STU405D pdf, ピン配列
S TU405D
P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
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Gate-Body Leakage
ON CHARACTERISTICS a
BVDSS VGS =0V, ID =-250uA -40
IDSS VDS =-32V, VGS =0V
IGSS VGS = 20V, VDS= 0V
V
-1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1 -1.6 -3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =-10V, ID= -6A
VGS =-4.5V, ID= -4A
40 48 m ohm
50 65 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
VDS = -5V, VGS = -10V
VDS = -10V, ID=-6A
-20
12
A
S
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
COSS
VDS =-25V, VGS = 0V
f =1.0MHZ
CRSS
980 1150 PF
135 PF
90 PF
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS b
2.2
ohm
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = -20V
tr ID = -1A
tD(O F F )
VGS = -10V
R GEN = 3.3 ohm
tf
12 ns
17 ns
82 ns
35 ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg VDS =-28V, ID =-6A,VGS =-10V
VDS =-28V, ID =-6A,VGS =-4.5V
Qgs VDS =-28V, ID = -6 A
Qgd VGS =-10V
3
20.7
11
1.5
6.2
nC
nC
nC
nC


3Pages


STU405D 電子部品, 半導体
S TU405D
1200
1000
800
C is s
600
400
6www.DataSheet4U.co2m00
C oss
C rss
0
0 5 10
15
20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
10
VDS =28V
8 ID=8A
6
4
2
0
0 3 6 9 12 15 18 21 24
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
200
100
60
10
Tr
T D(off)
T D(on)
Tf
V DS =20V ,ID=1A
1 V G S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (W)
F igure 11.s witching characteris tics
100
80
10 R DS(ON) Limit
V GS =10V
1 S ingle P ulse
Tc=25 C
0.5
0.1 1
1ms
DC1s100m10sms
10 30 60
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
2
1
D =0 . 5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
10-5
S INGLE PULS E
10-4
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
P DM
t1
t2
1. R J A (t)=r (t) * R J A
2. R J A=S ee Datas heet
3. T J M-T A = P DM* R J A (t)
4. Duty C ycle, D=t1/t2
1
10
F igure 13. Normalized T hermal T rans ient Impedance C urve
6

6 Page



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共有リンク

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部品番号部品説明メーカ
STU405D

Dual N-Channel E nhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics
STU405DH

Dual E nhancement Mode Field E ffect Transistor

SamHop Microelectronics
SamHop Microelectronics


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