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IXFM13N50 の電気的特性と機能

IXFM13N50のメーカーはIXYS Corporationです、この部品の機能は「HiPerFET Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFM13N50
部品説明 HiPerFET Power MOSFETs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFM13N50 Datasheet, IXFM13N50 PDF,ピン配置, 機能
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH 13N50
IXFM 13 N50
VDSS
ID (cont)
RDS(on)
trr
= 500 V
= 13 A
= 0.4 W
£ 250 ns
www.DataSheet4U.com
Symbol
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
dv/dt
PD
T
J
TJM
T
stg
TL
Md
Weight
Symbol
V
DSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
500 V
500 V
±20 V
±30 V
13 A
52 A
13 A
18 mJ
5 V/ns
180 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
GS
=
0
V,
I
D
=
250
mA
VDS = VGS, ID = 2.5 mA
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
500
2
V
4V
±100 nA
200 mA
1 mA
0.4 W
TO-247 AD (IXFH)
TO-204 AA (IXFM)
(TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
q International standard packages
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
- easy to drive and to protect
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Uninterruptible Power Supplies (UPS)
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91524D (10/95)
1-4

1 Page





IXFM13N50 pdf, ピン配列
Fig. 1 Output Characteristics
25
TJ = 25°C
20
15
VGS=10V
8V
7V
6V
10
www.DataSheet4U.com 5
5V
0
0 5 10 15
VDS - Volts
Fig. 3 R vs. Drain Current
DS(on)
20
1.4
TJ = 25°C
1.3
1.2
VGS = 10V
1.1
VGS = 15V
1.0
0.9
0.8
0
5 10 15 20 25
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
15.0
12.5
13N50
10.0
7.5
5.0
2.5
0.0
-50 -25
0 25 50 75 100 125 150
TC - Degrees C
© 2000 IXYS All rights reserved
IXFH 13N50
IXFH 13N50
Fig. 2 Input Admittance
25
20
TJ = 25°C
15
10
5
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
ID = 6A
1.50
1.25
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
VGS(th)
1.1
BVDSS
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
3-4


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部品番号部品説明メーカ
IXFM13N50

HiPerFET Power MOSFETs

IXYS Corporation
IXYS Corporation


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