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PDF IXFR26N60Q Data sheet ( Hoja de datos )
| Número de pieza | IXFR26N60Q | |
| Descripción | HiPerFETTM Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM Power MOSFETs IXFR 26N60Q
ISOPLUS247TM Q-CLASS
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalance Rated, High dV/dt
Low Gate Charge and Capacitances
VDSS = 600 V
ID25 = 23 A
RDS(on) = 250 mW
trr £ 250 ns
www.DataSheet4U.com
Symbol
V
DSS
VDGR
V
GS
VGSM
ID25
I
DM
IAR
E
AR
EAS
dv/dt
PD
T
J
TJM
T
stg
TL
VISOL
Weight
Symbol
VDSS
VGS(th)
IGSS
I
DSS
RDS(on)
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
T
C
= 25°C, Note 1
TC = 25°C
T
C
= 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V
DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
600 V
600 V
±20 V
±30 V
23 A
92 A
26 A
45 mJ
1.5 J
5 V/ns
310
-55 ... +150
150
-55 ... +150
250
2500
5
W
°C
°C
°C
°C
V~
g
ISOPLUS 247TM
E153432
G = Gate
S = Source
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Low drain to tab capacitance(<30pF)
• Low R HDMOSTM process
DS (on)
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load
Test Conditions
VGS = 0 V, ID = 250mA
VDS = VGS, ID = 4mA
VGS = ±20 V, VDS = 0
V =V
DS DSS
V =0V
GS
VGS = 10 V, ID = IT
Notes 2, 3
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
600 V
2.5
T=
J
25°C
T
J
= 125°C
4.5 V
±100 nA
25 mA
1 mA
250 mW
Switching (UIS)
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC & DC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98727 (06/09/00)
1-2
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