|
|
PDF IXFR26N50 Data sheet ( Hoja de datos )
| Número de pieza | IXFR26N50 | |
| Descripción | (IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXFR26N50 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Advanced Technical Information
HiPerFETTM Power MOSFETs
ISOPLUS247TM
IXFR 26N50
IXFR 24N50
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low trr, HDMOSTM Family
VDSS
ID25
500 V 24 A
500 V 22 A
trr £ 250 ns
RDS(on)
0.20 W
0.23 W
www.DataSheet4U.com
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
I
AR
E
AR
dv/dt
P
D
TJ
T
JM
Tstg
T
L
V
ISOL
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
500
500
±20
±30
TC = 25°C
TC = 25°C, Pulse width limited by TJM
T
C
= 25°C
26N50
24N50
26N50
24N50
26N50
24N50
26
24
104
96
26
24
T
C
= 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
T
J
£
150°C,
R
G
=
2
W
T
C
= 25°C
30
5
250
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
50/60 Hz, RMS t = 1 minute leads-to-tab
2500
6
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
V~
g
ISOPLUS 247TM
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low R HDMOSTM process
DS (on)
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Symbol
Test Conditions
VDSS
VGS(th)
IGSS
IDSS
R
DS(on)
VGS = 0 V, ID = 250uA
VDS = VGS, ID = 4mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
V = 10 V, I = I
GS D T
Notes 1 & 2
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
500 V
2 4V
±100 nA
TJ = 25°C
TJ = 125°C
26N50
24N50
200 mA
1 mA
0.20 W
0.23 W
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98526A (2/99)
1-2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFR26N50.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXFR26N50 | (IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs | IXYS Corporation |
| IXFR26N50Q | (IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs | IXYS Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |