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PDF IXFR21N100Q Data sheet ( Hoja de datos )
| Número de pieza | IXFR21N100Q | |
| Descripción | HiPerFETTM Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM Power MOSFETs IXFR 21N100Q
ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode, Low Qg,
High dv/dt, Low t , HDMOSTM Family
rr
VDSS = 1000 V
ID25 = 19 A
RDS(on) = 0.50 W
trr £ 250 ns
Preliminary data sheet
www.DataSheet4U.com
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
I
DM
IAR
EAR
E
AS
dv/dt
P
D
TJ
T
JM
Tstg
TL
VISOL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C (MOSFET chip capability)
External lead (current limit)
T
C
= 25°C, Note 1
TC = 25°C
TC = 25°C
T
C
= 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
T
J
£
150°C,
R
G
=
2
W
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
1000
1000
±20
±30
19
84
21
21
60
2.3
5
V
V
V
V
A
A
A
A
mJ
J
V/ns
400
-55 ... +150
150
-55 ... +150
300
2500
5
W
°C
°C
°C
°C
V~
g
Test Conditions
VGS = 0 V, ID = 250mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
VDS = VDSS
V =0V
GS
V = 10 V, I = I
GS D T
Notes 2, 3
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
1000
V
2.5
T
J
= 125°C
4.5 V
±100 nA
100 mA
2 mA
0.5 W
ISOPLUS 247TM
E153432
G = Gate
S = Source
Isolated backside*
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• IXYS advanced low Q process
g
• Low gate charge and capacitances
- easier to drive
- faster switching
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load
Switching (UIS)
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98723 (05/24/00)
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