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Número de pieza | IXFR200N10P | |
Descripción | PolarTM HiPerFET Power MOSFET | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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PolarTM HiPerFET
Power MOSFET
Electrically Isolated Tab
IXFR 200N10P
N-Channel Enhancement Mode
Fast Recovery Diode, Avavanche Rated
VDSS =
ID25 =
=RDS(on)
100 V
133 A
8 mΩ
www.DataSheetS4Uym.cobmol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
50/60 Hz, RMS, 1 minute
Mounting Force
Maximum Ratings
100 V
100 V
±20 V
±30 V
133 A
75 A
400 A
60 A
100 mJ
4J
10 V/ns
350
-55 ... +175
175
-55 ... +150
2500
20..120/4.6..20
5
W
°C
°C
°C
V~
Nm/lb
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
100 V
VGS(th)
VDS = VGS, ID = 500µA
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
VGS = 0 V
TJ = 150°C
TJ = 175°C
25
250
1000
µA
µA
µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 400A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
8 mΩ
5.5 mΩ
ISOPLUS247 (IXFR)
E153432
G
DS
ISOLATED TAB
G = Gate
S = Source
D = Drain
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
z Fast recovery intrinsic diode
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99239(06/05)
1 page IXFR 200N10P
1.00
www.DataSheet4U.com
0.10
0.01
0.00
0.1
Fig. 13. Maximum Transient Thermal Resistance
1 10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXFR200N10P.PDF ] |
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IXFR200N10P | PolarTM HiPerFET Power MOSFET | IXYS Corporation |
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