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IXFV26N50PのメーカーはIXYS Corporationです、この部品の機能は「Avalanche Rated Fast Instrinsic Diode」です。 |
部品番号 | IXFV26N50P |
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部品説明 | Avalanche Rated Fast Instrinsic Diode | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXFV26N50Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
PolarHVTM
Power MOSFET
Avalanche Rated
Fast Instrinsic Diode
Preliminary Data Sheet
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
VDSS =
ID25 =
≤RDS(on)
trr ≤
500 V
26 A
230 mΩ
200 ns
www.DataSheetS4Uy.mcobmol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuos
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Mounting torque (TO-247)
Mounting force
(PLUS220SMD)
TO-3P
PLUS220 & PLUS220SMD
Maximum Ratings
500 V
500 V
± 30
± 40
26
78
V
V
A
A
26 A
40 mJ
1.0 J
10 V/ns
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb
6g
5g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 4 mA
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
230 mΩ
TO-247 (IXFH)
PLUS220 (IXFV)
D (TAB)
G
DS
D (TAB)
PLUS220SMD (IXFV_S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Fast intrinsic diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99276A(09/05)
1 Page 30
27
24
21
18
15
12
9
6
www.DataSheet4U.com 3
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
7V
6V
5. 5V
5V
4.5V
12 3 45 67
VD S - Volts
8
30
27
24
21
18
15
12
9
6
3
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
7V
6V
5.5V
5V
4.5V
2 4 6 8 10 12 14 16 18 20
VD S - Volts
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
3.4
3 VGS = 10V
2.6 TJ = 125∫C
2.2
1.8
1.4
1 TJ = 25∫C
0.6
0
5 10 15 20 25 30 35 40 45 50 55 60
I D - Amperes
© 2005 IXYS All rights reserved
IXFH 26N50P IXFV 26N50P
IXFV 26N50PS
Fig. 2. Extended Output Characteristics
@ 25ºC
60
VGS = 10V
50 7V
40
6V
30
20
5.5V
10 5V
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3. 1
2.8 VGS = 10V
2. 5
2. 2
1.9 ID = 26A
1. 6
ID = 13A
1. 3
1
0. 7
0. 4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
27
24
21
18
15
12
9
6
3
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXFV26N50P | Avalanche Rated Fast Instrinsic Diode | IXYS Corporation |
IXFV26N50PS | Avalanche Rated Fast Instrinsic Diode | IXYS Corporation |