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PDF IXFH26N50P Data sheet ( Hoja de datos )
| Número de pieza | IXFH26N50P | |
| Descripción | Avalanche Rated Fast Instrinsic Diode | |
| Fabricantes | IXYS Corporation | |
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PolarHVTM
Power MOSFET
Avalanche Rated
Fast Instrinsic Diode
Preliminary Data Sheet
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
VDSS =
ID25 =
≤RDS(on)
trr ≤
500 V
26 A
230 mΩ
200 ns
www.DataSheetS4Uy.mcobmol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuos
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Mounting torque (TO-247)
Mounting force
(PLUS220SMD)
TO-3P
PLUS220 & PLUS220SMD
Maximum Ratings
500 V
500 V
± 30
± 40
26
78
V
V
A
A
26 A
40 mJ
1.0 J
10 V/ns
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb
6g
5g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 4 mA
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
230 mΩ
TO-247 (IXFH)
PLUS220 (IXFV)
D (TAB)
G
DS
D (TAB)
PLUS220SMD (IXFV_S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Fast intrinsic diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99276A(09/05)
1 page  
IXFH 26N50P IXFV 26N50P
IXFV 26N50PS
Fig. 13. Maxim um Transient Thermal Resistance
1.00
www.DataSheet4U.com
0.10
0.01
0.1
1 10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFH26N50P.PDF ] | |
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