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SKP02N60 の電気的特性と機能

SKP02N60のメーカーはInfineon Technologiesです、この部品の機能は「Fast IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 SKP02N60
部品説明 Fast IGBT
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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SKP02N60 Datasheet, SKP02N60 PDF,ピン配置, 機能
SKP02N60
SKB02N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
www.DataSheet4U.com- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel EmCon diode
C
G
E
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SKP02N60
SKB02N60
VCE IC VCE(sat) Tj Package
600V 2A
2.2V
150°C TO-220AB
TO-263AB
Ordering Code
Q67040-S4214
Q67040-S4215
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Value
600
6.0
2.9
12
12
Unit
V
A
6.0
2.9
12
±20
10
30
-55...+150
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02

1 Page





SKP02N60 pdf, ピン配列
SKP02N60
SKB02N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
www.DataSheetF4Ua.llcotimme
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=2A,
VGE=0/15V,
RG=118,
Lσ1) =180nH,
Cσ1) =180pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=200V, IF=2.9A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
20
13
259
52
0.036
0.028
0.064
24
16
311
62
0.041
0.036
0.078
ns
mJ
130 - ns
12 -
118 -
65 - nC
1.9 - A
180 - A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VCC=400V,
IC=2A,
VGE=0/15V,
RG=118,
Lσ1) =180nH,
Cσ1) =180pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=200V, IF=2.9A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
20
14
287
67
0.054
0.043
0.097
24
17
344
80
0.062
0.056
0.118
ns
mJ
150 - ns
19 -
131 -
150 - nC
3.8 - A
200 - A/µs
1) Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Jul-02


3Pages


SKP02N60 電子部品, 半導体
SKP02N60
SKB02N60
100ns
www.DataSheet4U.com
t
d(off)
tf
td(on)
tr
10ns
0A 1A 2A 3A 4A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 1 1 8 ,
Dynamic test circuit in Figure E)
5A
100ns
td(off)
tf
td(on)
tr
10ns
0
100
200
300
400
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 2A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 1 1 8,
Dynamic test circuit in Figure E)
5.5V
5.0V
4.5V
4.0V
3.5V
max.
3.0V
typ.
2.5V
min.
2.0V
-50°C 0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.15mA)
6 Jul-02

6 Page



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部品番号部品説明メーカ
SKP02N60

Fast IGBT

Infineon Technologies
Infineon Technologies


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