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3DD13007 PDF Data sheet ( 特性 )

部品番号 3DD13007
部品説明 Plastic-Encapsulated Transistors
メーカ TRANSYS Electronics
ロゴ TRANSYS Electronics ロゴ 



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3DD13007 Datasheet, 3DD13007 PDF,ピン配置, 機能
Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
3DD13007 TRANSISTOR (NPN)
FEATURES
Power dissipation
aSheet4U.com
PCM:
2 W (Tamb=25)
Collector current
ICM: 8 A
Collector-base voltage
V(BR)CBO:
700 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Fall time
Storage time
V(BR)CBO
Ic= 1mA, IE=0
V(BR)CEO
Ic= 10mA, IB=0
V(BR)EBO
IE= 1mA, IC=0
ICBO VCB= 700V, IE=0
IEBO VEB=9V, IC=0
hFE(1)
VCE= 5V, IC= 2 A
hFE(2)
VCE=5 V, IC=5A
VCE(sat)
IC=2A,IB=0.4A
VBE(sat)
fT
Cob
IC=2A, IB= 0.4A
Ic=500mA,VCE=10V
f=1MHZ
VCE=10,IE=0, f=0.1MHz
tf Vcc=125V, Ic=5A
ts IB1=-IB2=1A
700
400
9
8
5
4
80
MAX
1
100
40
30
1
1.2
0.7
3
UNIT
V
V
V
mA
µA
V
V
MHZ
pF
µs
µs
CLASSIFICATION OF hFE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40

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