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PDF 3DD13007 Data sheet ( Hoja de datos )
| Número de pieza | 3DD13007 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jiangsu Changjiang Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3DD13007 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13007 TRANSISTOR NPN
FEATURES
Power dissipation
PCM : 2 W
Collector current
www.DataSheet4U.com
ICM: 8
A
Collector-base voltage
Tamb=25
V(BR)CBO : 700 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 220
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 1mA IE=0
700
V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10m A IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 1mA IC=0
9
V
Collector cut-off current
ICBO VCB= 700V IE=0
1 mA
Emitter cut-off current
IEBO VEB= 9 V IC=0
100 µA
DC current gain
hFE 1
hFE 2
VCE= 5V, IC= 2 A
VCE=5 V, IC=5A
8
5
40
30
Collector-emitter saturation voltage
VCE(sat)
IC=2A,IB=0.4A
1V
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Fall time
Storage time
CLASSIFICATION OF hFE(1)
Rank
VBE(sat)
fT
Cob
tf
ts
IC=2A, IB= 0.4A
Ic=500mA,VCE=10V
f=1MHZ
VCE=10,IE=0 f=0.1MHz
Vcc=125V, Ic=5A
IB1=-IB2=1A
4
1.2 V
MHZ
80 pF
0.7 µs
3 µs
Range
8-15
15-20
20-25
25-30
30-35
35-40
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 3DD13007.PDF ] | |
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