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2SC5450のメーカーはSanyo Semicon Deviceです、この部品の機能は「Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications」です。 |
部品番号 | 2SC5450 |
| |
部品説明 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications | ||
メーカ | Sanyo Semicon Device | ||
ロゴ | |||
このページの下部にプレビューと2SC5450ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Ordering number:EN5955
NPN Triple Diffused Planar Silicon Transistor
2SC5450
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed.
· High breakdown voltage (VCBO=1600V).
· High reliability (Adoption of HVP process).
w w w . D a t a S ·hAedeopt t4ioUn .ocf Mo mBIT process.
Package Dimensions
unit:mm
2039D
[2SC5450]
3.4 16.0
5.6
3.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
2.8
2.0
1.0
123
5.45 5.45
2.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Conditions
Ratings
1600
800
6
10
25
3.0
70
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector-to-Emitter Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
VCB=800V, IE=0
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=7A, IB=1.75A
IC=7A, IB=1.75A
Ratings
min typ max
Unit
10 µA
1.0 mA
800 V
1.0 mA
5V
1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61099TS (KOTO) TA-1386 No.5957–1/4
1 Page 2SC5450
SW Time - I C
SW Time - I B2
7
5
3
VCC = 200V
tstg IIBC2/I/BIB11==62.5
R load
10
7
5
VCC = 200V
IC =6A
tstg
IB1 =1A
R load
23
2
1.0
7
5
3 tf
2
1.0
7 tf
5
3
2
0.1
www.DataSheet4U.com
7
7
0.1
2 3 5 7 1.0
2 3 5 7 10
Collector Current, IC – A
2
5
3 I CP
2
10 I C
7
5
3
2
1.0
7
5
3
2
Forward Bias A S O
PC =70W
0.1
7
5 Tc = 25°C
3 Single pulse
2
3 5 7 10
2 3 5 7 100 2 3 5
Collector-to-Emitter Voltage, VCE – V
7 1000
4.0 PC - Ta
3.0
2.0 No heat sink
1.0
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
0.1
7
7 0.1
5
3
2
2 3 5 7 1.0
23
Base Current, IB2 – A
Reverse Bias A S O
5 7 10
10
7
5
3
2
1.0
7
5
3 L =500µH
2
IB2 =-3A
Tc = 25°C
0.1 Single pulse
3 5 7 100
23
5 7 1000
Collector-to-Emitter Voltage, VCE – V
80 PC - Tc
2
3
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – °C
No.5955–3/4
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ 2SC5450 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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2SC5450 | Silicon NPN Power Transistor | Inchange Semiconductor |
2SC5450 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications | Sanyo Semicon Device |
2SC5451 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications | Sanyo Semicon Device |
2SC5452 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications | Sanyo Semicon Device |