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P9NC60FP の電気的特性と機能

P9NC60FPのメーカーはSTMicroelectronicsです、この部品の機能は「 STP9NC60FP」です。


製品の詳細 ( Datasheet PDF )

部品番号 P9NC60FP
部品説明 STP9NC60FP
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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P9NC60FP Datasheet, P9NC60FP PDF,ピン配置, 機能
STP9NC60
® STP9NC60FP
N - CHANNEL 600V - 0.6- 9A TO-220/TO-220FP
PowerMESHΙΙ MOSFET
www.DataSheet4U.com T YPE
VDSS
R DS ( o n )
ID
STP9NC60
S T P 9 NC6 0F P
600 V
600 V
< 0.75
< 0.75
9.0 A
5.2 A
ν TYPICAL RDS(on) = 0.6
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν NEW HIGH VOLTAGE BENCHMARK
ν GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
ν HIGH CURRENT, HIGH SPEED SWITCHING
ν SWITH MODE POWER SUPPLIES (SMPS)
ν DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
P ara met er
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Volt age (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulat ion W it hst and Voltage (DC)
Tstg Storage Temperature
Tj Max. O perating Junction Temperature
() Pulse width limited by safe operating area
February 2000
Value
STP9NC60 STP9NC60FP
600
600
± 30
9.0 5.2
5.7 3.3
36 36
125 40
1.0 0.32
4.5 4.5
2000
-65 to 150
150
(1) ISD 9A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
V
oC
oC
1/9

1 Page





P9NC60FP pdf, ピン配列
STP9NC60/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Sy mbo l
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
www.DataSheet4U.com Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 300 V
ID = 4.5 A
RG = 4.7
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 480 V ID = 9. 0 A VGS = 10 V
Min.
Typ .
28
15
44
10.5
19.5
Max.
62
Un it
ns
ns
nC
nC
nC
SWITCHING OFF
Sy mbo l
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
tr(Vo f f )
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 300 V
ID = 4.5 A
RG = 4.7
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 480 V
ID = 9.0 A
RG = 4.7
VGS = 10 V
(I nductive Load, see fig. 5)
Min.
Typ .
53
30
15
12
24
Max.
Un it
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Sy mbo l
ISD
ISDM ()
VSD ()
trr
Qrr
IRRM
Parameter
Source-drain Current
Source-drain Current
( pu ls e d)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
Min.
ISD = 9 A VGS = 0
ISD = 9 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
Typ .
Max.
9.0
36
1.6
610
5.4
17
Un it
A
A
V
ns
µC
A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9


3Pages


P9NC60FP 電子部品, 半導体
STP9NC60/FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
www.DataSheet4U.com
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9

6 Page



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共有リンク

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部品番号部品説明メーカ
P9NC60FP

STP9NC60FP

STMicroelectronics
STMicroelectronics


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