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P9NC60FP PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 P9NC60FP
部品説明 STP9NC60FP
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 



Total 9 pages
		

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P9NC60FP Datasheet, P9NC60FP PDF,ピン配置, 機能
STP9NC60
® STP9NC60FP
N - CHANNEL 600V - 0.6- 9A TO-220/TO-220FP
PowerMESHΙΙ MOSFET
www.DataSheet4U.com T YPE
VDSS
R DS ( o n )
ID
STP9NC60
S T P 9 NC6 0F P
600 V
600 V
< 0.75
< 0.75
9.0 A
5.2 A
ν TYPICAL RDS(on) = 0.6
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν NEW HIGH VOLTAGE BENCHMARK
ν GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
ν HIGH CURRENT, HIGH SPEED SWITCHING
ν SWITH MODE POWER SUPPLIES (SMPS)
ν DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
P ara met er
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Volt age (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulat ion W it hst and Voltage (DC)
Tstg Storage Temperature
Tj Max. O perating Junction Temperature
() Pulse width limited by safe operating area
February 2000
Value
STP9NC60 STP9NC60FP
600
600
± 30
9.0 5.2
5.7 3.3
36 36
125 40
1.0 0.32
4.5 4.5
2000
-65 to 150
150
(1) ISD 9A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
V
oC
oC
1/9

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