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PFF4N60 の電気的特性と機能

PFF4N60のメーカーはPyramisです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 PFF4N60
部品説明 N-Channel MOSFET
メーカ Pyramis
ロゴ Pyramis ロゴ 




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PFF4N60 Datasheet, PFF4N60 PDF,ピン配置, 機能
Pyramis Corporation
PFB4N60/PFF4N60
“The Silicon System Solutions Company”
Applications:
• Adaptor
• Charger
• SMPS Standby Power
• LCD Panel Power
Features:
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
www.DataSheet4U.com
N-Channel MOSFET
VDSS
600V
PRELIMINARY
RDS(ON) typical
1.8
ID
4.1 A
Ordering Information
PART NUMBER
PACKAGE
BRAND
PFB4N60
PFF4N60
TO-220
TO-220F
PFB4N60
PFF4N60
Absolute Maximum Ratings Tc=25 oC unless otherwise specified
G DS
TO-220
Not to Scale
GDS
TO-220F
Not to Scale
Symbol
Parameter
PFB4N60 PFF4N60
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed DrainCurrent,VGS@10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
600
4.1 4.1*
Fig. 3
Fig. 6
100 33
0.80 0.26
VGS
EAS
IAS
dv/dt
TL
TPKG
TJ and TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=3.0mH, ID=4.1 Amps
Pulsed Avalanche Engergy
Peak Diode Recovery dv/dt
Maximum Soldering Lead Temperature
Max Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
(NOTE *3)
±30
250
Fig. 8
3.0
300
260
-55 to 150
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the semiconductor device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case.
Junction-to-Ambient
PFB4N60 PFF4N60
1.25 3.8
62.5 62.5
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150 oC
1 cubic foot chamber, free air
©2004 Pyramis Corp.
PFB4N60/PFF4N60 REV. B March 2004

1 Page





PFF4N60 pdf, ピン配列
PRELIMINARY
Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
IS
Continuous Source Current (Body Diode)
--
--
4.1
ISM
Pulsed Source Current (Body Diode)
-- --
Fig. 6
VSD Diode Forward Voltage
-- --
1.5
trr Reverse Recovery Time
-- 253
--
Qrr Reverse Recovery Charge
-- 1.6
--
Units
A
A
V
ns
µC
Test Conditions
Integral pn-diode
in MOSFET
IS=4.1A, VGS=0V
VGS=0 V
IF=4.1A, di/dt=100 A/µs
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Notes:
*1. TJ = +25 oC to +150 oC
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 4.1A di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC.
*4. Pulse width < 250µs; duty cycle < 2%.
*5 Essentailly independent of operating temperature.
©2004 Pyramis Corp.
PFB4N60/PFF4N60 REV. B, March 2004
Page 3 of 7


3Pages


PFF4N60 電子部品, 半導体
Figure 11. Typical Breakdown Voltage vs
Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-75
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VGS = 0V
ID = 250 µA
-50 -25 0.0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
Figure 13. Maximum Forward Bias Safe
Operating Area Area
100.0 TJ = MAX RATED,
TC = 25 oC
10µS
10.0 100µS
1.0
0.1
1
1.0mS
10mS
OPERATION IN THIS AREA
MAY
BE
LIMITED
BY
R
DS(ON)
10 100
DC
VDS, Drain-to-Source Voltage (V)
1000
Figure 15. Typical Gate Charge
vs Gate-to-Source Voltage
12
10
8
6
V DS =1=503=0V40V50V
4
2
ID = 4.1A
0
0 5 10 15 20 25
QG,Total Gate Charge (nC)
©2004 Pyramis Corp.
PRELIMINARY
Figure 12. Typical Threshold Voltage vs
Junction Temperature
1.2
VGS = VDS, ID = 250 µA
1.1
1.0
0.9
0.8
0.7
-75
-50 -25 0.0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
Figure 14. Typical Capacitance
vs Drain-to-Source Voltage
10000
1000
CISS
100
COSS
10 VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD
1
01
10
CRSS
100
VDS, Drain Voltage (V)
1000
Figure 16. Typical Body Diode Transfer
Characteristics
50
45
40
35 VGS = 0V
30
25
20
15
10
5
0
0.4
150o2C5o-5C5o C
0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
1.6
PFB4N60/PFF4N60 REV. B, March 2004
Page 6 of 7

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
PFF4N60

N-Channel MOSFET

Pyramis
Pyramis
PFF4N60

N-channel MOSFET

PowerGate
PowerGate


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