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PDF STRH80P6FSY3 Data sheet ( Hoja de datos )
| Número de pieza | STRH80P6FSY3 | |
| Descripción | P-channel 60V - 0.021 Ohm - TO-254AA Rad-hard low gate charge STripFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STRH80P6FSY3
P-channel 60V - 0.021Ω - TO-254AA
Rad-hard low gate charge STripFET™ Power MOSFET
General features
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Type
STRH80P6FSY3
VDSS
60V
■ Low RDS(on)
■ Fast switching
■ Single event effect (SEE) hardned
■ Low total gate charge
■ Light weight
■ 100% avalanche tested
■ Application oriented characterization
■ Hermetically sealed
■ Heavy ion SOA
■ 100kRad TID
■ SEL & SEGR with 34Mev/cm²/mg LET ions
TO-254AA
Internal schematic diagram
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to sustain high TID
and provide immunity to heavy ion effects. It is
therefore suitable as power switch in mainly high-
efficiency DC-DC converters. It is also intended
for any application with low gate charge drive
requirements.
Application
■ Satellite
■ High reliability
Order codes
Part number
STRH80P6FSY1 (1)
STRH80P6FSY3 (2)
Marking
RH80P6FSY1
RH80P6FSY3
1. Mil temp range
2. Space flights parts (full ESA flow screening)
Package
TO-254AA
TO-254AA
Packaging
Individual strip pack
Individual strip pack
March 2007
Rev 2
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12
1 page  
STRH80P6FSY3
Electrical characteristics
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Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 80A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80A, di/dt = 100A/µs
VDD= 20V, Tj = 25°C
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80A, di/dt = 100A/µs
VDD= 20V, Tj = 150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max Unit
80 A
320 A
1.1 V
350 ns
5.4 µC
31 A
460 ns
9 µC
39 A
2.2 Post-irradiation
The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The
technology is extremely resistant to assurance well functioning of the device inside the
radiation environments. Every manufacturing lot is tested for total ionizing dose.
(@Tj=25°C up to 100Krad (a))
Table 8. On/off states
Symbol
Parameter
Test conditions
IDSS
Zero gate voltage drain current
(VGS = 0)
80% BVDss
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±18V
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS = 0V
VGS(th) Gate threshold voltage
VDS =VGS, ID = 1mA
RDS(on)
Static drain-source on
resistance
VGS = 12V, ID = 40A
Min. Typ. Max Unit
10 µA
±100 nA
100 V
2 4.5 V
0.021 0.024 Ω
a. According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec.
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5 Page 
STRH80P6FSY3
5 Revision history
Table 11. Revision history
Date
Revision
18-Dec-2006
1 First release
19-Mar-2007
2 Complete version
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Revision history
Changes
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STRH80P6FSY3.PDF ] | |
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