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IXFN34N80 の電気的特性と機能

IXFN34N80のメーカーはIXYS Corporationです、この部品の機能は「HiPerFETTM Power MOSFETs Single DieMOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFN34N80
部品説明 HiPerFETTM Power MOSFETs Single DieMOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFN34N80 Datasheet, IXFN34N80 PDF,ピン配置, 機能
HiPerFETTM Power MOSFETs
Single DieMOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Preliminary data sheet
IXFN 34N80
D
S
VDSS = 800 V
ID25 = 34 A
RDS(on) = 0.24 W
trr £ 250 ns
Symbol
www.DataSheetV4UDS.Scom
VDGR
VGS
VGSM
I
D25
IDM
I
AR
EAR
EAS
dv/dt
PD
T
J
T
JM
Tstg
TL
VISOL
Md
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
IISOL£ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
800 V
800 V
±20 V
±30 V
34 A
136 A
34 A
64 mJ
3J
5 V/ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
600 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Features
· International standard packages
· miniBLOC,with Aluminium nitride
isolation
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
· Fast intrinsic Rectifier
Symbol
VDSS
VGS(th)
IGSS
I
DSS
R
DS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ.
max.
VGS = 0 V, ID = 3 mA
VDSS temperature coefficient
VDS = VGS, ID = 8 mA
VGS(th) temperature coefficient
VGS = ±20 VDC, VDS = 0
V =V
DS DSS
VGS = 0 V
V = 10 V, I = 0.5 • I
GS D D25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
800
3.0
T=
J
25°C
TJ = 125°C
0.096
-0.214
V
%/K
5.0 V
%/K
±200
100
2
nA
mA
mA
0.24 W
Applications
· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· Temperature and lighting controls
Advantages
· Easy to mount
· Space savings
· High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98529D (6/99)
1-4

1 Page





IXFN34N80 pdf, ピン配列
40
TJ = 25OC VGS = 9V
32 8V
7V
6V
24
5V
16
4V
8
www.DataSheet4U.com 0
0 2 4 6 8 10
VDS - Volts
Figure 1. Output Characteristics at 25OC
2.4
2.2 VGS = 10V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
10
TJ = 125OC
TJ = 25OC
20 30
ID - Amperes
40
50
Figure 3.
40
RDS(on) normalized to 0.5 ID25 value
vs. I
D
32
24
16
8
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
Figure 5. Drain Current vs. Case Temperature
© 2000 IXYS All rights reserved
IXFN 34N80
40
TJ = 125OC VGS = 9V
32
8V
7V
6V
24
5V
16
4V
8
0
0 4 8 12 16
VDS - Volts
Figure 2. Output Characteristics at
125OC
2.2
VGS = 10V
2.0
20
1.8
1.6 ID = 34A
ID =17A
1.4
1.2
1.0
25
50 75 100 125
TJ - Degrees C
150
Figure 4.
40
RDS(on) normalized to 0.5 ID25
value vs. TJ
32
24
TJ = 125oC
16
8 TJ = 25oC
0
2.5 3.0 3.5 4.0 4.5
VGS - Volts
Figure 6. Admittance Curves
5.0
5.5
3-4


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部品番号部品説明メーカ
IXFN34N80

HiPerFETTM Power MOSFETs Single DieMOSFET

IXYS Corporation
IXYS Corporation


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