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H9926TS の電気的特性と機能

H9926TSのメーカーはHi-Sincerity Mocroelectronicsです、この部品の機能は「Dual N-Channel Enhancement-Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 H9926TS
部品説明 Dual N-Channel Enhancement-Mode MOSFET
メーカ Hi-Sincerity Mocroelectronics
ロゴ Hi-Sincerity Mocroelectronics ロゴ 




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H9926TS Datasheet, H9926TS PDF,ピン配置, 機能
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
H9926TS / H9926CTS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
www.DataShtreeent4cUh.pcoromcess. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Features
RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=30m@VGS=4.5V, ID=6A
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
Fully Characterized Avalanche Voltage and Current
Ideal for Li ion Battery Pack Applications
8-Lead Plastic TSSOP-8L
Package Code: TS
H9926TS Symbol & Pin Assignment
8765
Q2
Q1
1234
Pin 1: Drain 1
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain 2
H9926CTS Symbol & Pin Assignment
8765
Q2
Q1
1234
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Applications
Battery Protection
Load Switch
Power Management
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS
VGS
ID
IDM
PD
Tj, Tstg
RθJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
Total Power Dissipation @TA=75oC
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
20
±12
6
30
1.5
0.96
-55 to +150
83
Units
V
V
A
A
W
W
°C
°C/W
H9926TS, H9926CTS
HSMC Product Specification

1 Page





H9926TS pdf, ピン配列
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 3/4
TSSOP-8L Dimension
D
87 65
www.DataSheet4U.cEom1
Pin1
index
2 34
E
A1
b
R 0.15
A
e
Seating
Plane
S
L
8-Lead TSSOP-8L Plastic
Surface Mounted Package
HSMC Package Code: TS
H9926TS Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
Control Code
Data Code
Pin 1 Index
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
H9926CTS Marking:
Detail F
C
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
Control Code
Data Code
Pin 1 Index
0.25
Detail F
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D
Note: Green label is used for pb-free packing
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A - 1.20
A1 0.05 0.15
b 0.19 0.3
C 0.09 0.20
D 2.90 3.10
E 6.20 6.60
E1 4.30 4.50
e 0.65 BSC
L 0.45 0.75
S 0o 8o
*: Typical, Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H9926TS, H9926CTS
HSMC Product Specification


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部品番号部品説明メーカ
H9926TS

Dual N-Channel Enhancement-Mode MOSFET

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics


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