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H9926TSのメーカーはHi-Sincerity Mocroelectronicsです、この部品の機能は「Dual N-Channel Enhancement-Mode MOSFET」です。 |
部品番号 | H9926TS |
| |
部品説明 | Dual N-Channel Enhancement-Mode MOSFET | ||
メーカ | Hi-Sincerity Mocroelectronics | ||
ロゴ | |||
このページの下部にプレビューとH9926TSダウンロード(pdfファイル)リンクがあります。 Total 4 pages
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
H9926TS / H9926CTS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
www.DataShtreeent4cUh.pcoromcess. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Features
• RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
8-Lead Plastic TSSOP-8L
Package Code: TS
H9926TS Symbol & Pin Assignment
8765
Q2
Q1
1234
Pin 1: Drain 1
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain 2
H9926CTS Symbol & Pin Assignment
8765
Q2
Q1
1234
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Applications
• Battery Protection
• Load Switch
• Power Management
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS
VGS
ID
IDM
PD
Tj, Tstg
RθJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
Total Power Dissipation @TA=75oC
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
20
±12
6
30
1.5
0.96
-55 to +150
83
Units
V
V
A
A
W
W
°C
°C/W
H9926TS, H9926CTS
HSMC Product Specification
1 Page HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 3/4
TSSOP-8L Dimension
D
87 65
www.DataSheet4U.cEom1
Pin1
index
2 34
E
A1
b
R 0.15
A
e
Seating
Plane
S
L
8-Lead TSSOP-8L Plastic
Surface Mounted Package
HSMC Package Code: TS
H9926TS Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
Control Code
Data Code
Pin 1 Index
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
H9926CTS Marking:
Detail F
C
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
Control Code
Data Code
Pin 1 Index
0.25
Detail F
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D
Note: Green label is used for pb-free packing
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A - 1.20
A1 0.05 0.15
b 0.19 0.3
C 0.09 0.20
D 2.90 3.10
E 6.20 6.60
E1 4.30 4.50
e 0.65 BSC
L 0.45 0.75
S 0o 8o
*: Typical, Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H9926TS, H9926CTS
HSMC Product Specification
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ H9926TS データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
H9926TS | Dual N-Channel Enhancement-Mode MOSFET | Hi-Sincerity Mocroelectronics |