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HIRF830 の電気的特性と機能

HIRF830のメーカーはHi-Sincerity Mocroelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HIRF830
部品説明 N-CHANNEL POWER MOSFET
メーカ Hi-Sincerity Mocroelectronics
ロゴ Hi-Sincerity Mocroelectronics ロゴ 




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HIRF830 Datasheet, HIRF830 PDF,ピン配置, 機能
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 1/4
HIRF830 / HIRF830F
N-CHANNEL POWER MOSFET
Description
This N - Channel MOSFETs provide the designer with the best
combination of fast switching, ruggedized device design, low on-
www.DataShreeesti4sUta.cnocme and cost-effectiveness.
Features
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance
Junction to Case Max.
RθJA
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB 1.71
TO-220FP
3.3
62
Units
°C/W
°C/W
HIRF830 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
123
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
HIRF830 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain to Current (Continuous)
IDM Drain to Current (Pulsed) (*1)
VGS Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
PD Derate above 25°C
TO-220AB
TO-220FP
EAS Single Pulse Avalanche Energy (*2)
IAR Avalanche Current (*1)
EAR Repetitive Avalanche Energy (*1)
dv/dt Peak Diode Recovery (*3)
Tj Operating Temperature Range
Tstg Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25°C, L=24mH, RG=25, IAS=4.5A
*3: ISD4.5A, di/dt75A/us, VDDV(BR)DSS, TJ150°C
HIRF830, HIRF830F
Value
500
4.5
18
±20
74
38
0.59
0.3
250
9
7.4
5
-55 to 150
-55 to 150
300
Units
V
A
A
V
W
W/°C
mJ
A
mJ
V/ns
°C
°C
°C
HSMC Product Specification

1 Page





HIRF830 pdf, ピン配列
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 3/4
TO-220AB Dimension
A
D
B
E
F
www.DataSheet4U.com
G
I
Tab
P
L
H
3
2
1
M
O
J
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
C
Normal: None H
I RF
830
Date Code
Control Code
K
Note: Green label is used for pb-free packing
N Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 5.58 7.49
B 8.38 8.90
C 4.40 4.70
D 1.15 1.39
E 0.35 0.60
F 2.03 2.92
G 9.66 10.28
H - *16.25
I - *3.83
J 3.00 4.00
K 0.75 0.95
L 2.54 3.42
M 1.14 1.40
N - *2.54
O 12.70 14.27
P 14.48 15.87
*: Typical, Unit: mm
TO-220FP Dimension
A
α1
D
α2 α3
α4
α5
EO
C
G
F
M
I
3
2
1
N
L
J
K
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H I RF
830F
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
D
E
F
G
I
J
K
L
M
N
O
α1/2/4/5
α3
Min.
6.48
4.40
2.34
0.45
9.80
3.10
2.70
0.60
2.34
12.48
15.67
0.90
2.00
-
-
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5o
*27o
*: Typical, Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HIRF830, HIRF830F
HSMC Product Specification


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共有リンク

Link :


部品番号部品説明メーカ
HIRF830

N-CHANNEL POWER MOSFET

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
HIRF830F

N-CHANNEL POWER MOSFET

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics


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