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HIRF830のメーカーはHi-Sincerity Mocroelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | HIRF830 |
| |
部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | Hi-Sincerity Mocroelectronics | ||
ロゴ | |||
このページの下部にプレビューとHIRF830ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 1/4
HIRF830 / HIRF830F
N-CHANNEL POWER MOSFET
Description
This N - Channel MOSFETs provide the designer with the best
combination of fast switching, ruggedized device design, low on-
www.DataShreeesti4sUta.cnocme and cost-effectiveness.
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance
Junction to Case Max.
RθJA
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB 1.71
TO-220FP
3.3
62
Units
°C/W
°C/W
HIRF830 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
123
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
HIRF830 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain to Current (Continuous)
IDM Drain to Current (Pulsed) (*1)
VGS Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
PD Derate above 25°C
TO-220AB
TO-220FP
EAS Single Pulse Avalanche Energy (*2)
IAR Avalanche Current (*1)
EAR Repetitive Avalanche Energy (*1)
dv/dt Peak Diode Recovery (*3)
Tj Operating Temperature Range
Tstg Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25°C, L=24mH, RG=25Ω, IAS=4.5A
*3: ISD≤4.5A, di/dt≤75A/us, VDD≤V(BR)DSS, TJ≤150°C
HIRF830, HIRF830F
Value
500
4.5
18
±20
74
38
0.59
0.3
250
9
7.4
5
-55 to 150
-55 to 150
300
Units
V
A
A
V
W
W/°C
mJ
A
mJ
V/ns
°C
°C
°C
HSMC Product Specification
1 Page HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 3/4
TO-220AB Dimension
A
D
B
E
F
www.DataSheet4U.com
G
I
Tab
P
L
H
3
2
1
M
O
J
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
C
Normal: None H
I RF
830
Date Code
Control Code
K
Note: Green label is used for pb-free packing
N Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 5.58 7.49
B 8.38 8.90
C 4.40 4.70
D 1.15 1.39
E 0.35 0.60
F 2.03 2.92
G 9.66 10.28
H - *16.25
I - *3.83
J 3.00 4.00
K 0.75 0.95
L 2.54 3.42
M 1.14 1.40
N - *2.54
O 12.70 14.27
P 14.48 15.87
*: Typical, Unit: mm
TO-220FP Dimension
A
α1
D
α2 α3
α4
α5
EO
C
G
F
M
I
3
2
1
N
L
J
K
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H I RF
830F
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
D
E
F
G
I
J
K
L
M
N
O
α1/2/4/5
α3
Min.
6.48
4.40
2.34
0.45
9.80
3.10
2.70
0.60
2.34
12.48
15.67
0.90
2.00
-
-
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5o
*27o
*: Typical, Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HIRF830, HIRF830F
HSMC Product Specification
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ HIRF830 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
HIRF830 | N-CHANNEL POWER MOSFET | Hi-Sincerity Mocroelectronics |
HIRF830F | N-CHANNEL POWER MOSFET | Hi-Sincerity Mocroelectronics |