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PDF PJSMS12 Data sheet ( 特性 )

部品番号 PJSMS12
部品説明 QUAD TVS/ZENER ARRAY
メーカ Pan Jit International
ロゴ Pan Jit International ロゴ 

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PJSMS12 Datasheet, PJSMS12 PDF,ピン配置, 機能
PJSMS05 SERIES
QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION
This Quad TVS/Zener Array family have been designed to Protect Sensitive
Equipment against ESD and to prevent Latch-Up events in CMOS circuitry
operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated
solution to protect up to 4 data lines where the board space is a premium.
SPECIFICATION FEATURES
350W Power Dissipation (8/20µs Waveform)
Low Leakage Current, Maximum of 5µA at rated voltage
Very Low Clamping Voltage
IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance
www.DataSheet4U.com
Industry Standard Surface Mount Package SOT23-6L
100% Tin Matte Finish (RoHS Compliance)
1
654
APPLICATIONS
Personal Digital Assistant (PDA)
SIM Card Port Protection (Mobile Phone)
Portable Instrumentation
Mobile Phones and Accessories
Memory Card Port Protection
MAXIMUM RATINGS (Per Device)
Rating
Peak Pulse Power (8/20µs Waveform)
ESD Voltage (HBM)
Operating Temperature Range
Storage Temperature Range
1 23
SOT23-6L
TVS
PJSMS05
PJSMS12
PJSMS15
PJSMS24
Marking Code
M05
M12
M15
M24
Symbol
P pp
V ESD
TJ
Tstg
Value
350
>25
-50 to +125
-50 to +150
Units
W
kV
°C
°C
ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C
PJSMS05
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
VWRM
VBR
IR
Vc
Vc
Cj
Cj
Conditions
Min
I BR = 1mA
VR = 5V
I pp = 5A
I pp = 24A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2, 5
5 Vdc Bias f = 1MHz
Between I/O pins and pin 2, 5
6
Typical
Max
5
5
9.8
13
225
125
Units
V
V
µA
V
V
pF
pF
5/11/2006
Page 1
www.panjit.com

1 Page





PJSMS12 pdf, ピン配列
PJSMS05 SERIES
TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Surge Pulse Waveform Definition
110
100
90
80
70
60
www.DataSheet4U.com50
40
30
20
10
0
0
Pulse Waveform
50% of Ipp @ 20µs
Rise time 10-90% - 8µs
5 10 15 20 25 30
tim e, µsec
Non-Repetitive Peak Pulse Power vs Pulse Time
1000
100
10
1
0.1
0.01
1
10 100
Pulse Duration, µsec
1000
Clamping Voltage vs. Peak current
45
40
35
30
25
20
15
10
5
0
0
PJSMS24
PJSMS15
PJSMS12
PJSMS05
5 10 15 20 25 30
Ipp, A (8/20µsec)
200
180
160
140
120
100
80
60
40
20
0
Off-State Capacitance per Device - 1MHz
PJSMS05
1234
Bias, Vdc
5
5/11/2006
Page 3
www.panjit.com


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