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STW13NM50NのメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。 |
部品番号 | STW13NM50N |
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部品説明 | N-channel Power MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTW13NM50Nダウンロード(pdfファイル)リンクがあります。 Total 17 pages
STB13NM50N/-1 - STF13NM50N
STP13NM50N - STW13NM50N
N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK
Second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
(@Tjmax)
RDS(on)
ID
STB13NM50N
STB13NM50N-1
STF13NM50N
STP13NM50N
STW13NM50N
550V
550V
550V
550V
550V
<0.32Ω
<0.32Ω
<0.32Ω
<0.32Ω
<0.32Ω
12A
12A
12A(1)
12A
12A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
This product is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Application
■ Switching application
Order codes
Part number
STB13NM50N-1
STB13NM50N
STP13NM50N
STF13NM50N
STW13NM50N
Marking
B13NM50N
B13NM50N
P13NM50N
F13NM50N
W13NM50N
3
2
1
TO-220
123
I²PAK
3
2
1
TO-220FP
TO-247
3
1
D²PAK
Internal schematic diagram
Package
I²PAK
D²PAK
TO-220
TO-220FP
TO-247
Packaging
Tube
Tape & reel
Tube
Tube
Tube
May 2007
Rev 2
1/17
www.st.com
17
1 Page STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N
1 Electrical ratings
Electrical ratings
www.DataSheet4U.com
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID Drain current (continuous) at TC = 100°C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
dv/dt (3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;TC=25°C)
Tj Operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤12A, di/dt ≤400A/µs, VDD =80% V(BR)DSS
Value
TO-220/TO-247
D²PAK/I²PAK
TO-220FP
500
± 25
12
6
48
100
12 (1)
6 (1)
48 (1)
25
15
-- 2500
-55 to 150
Unit
V
V
A
A
A
W
V/ns
V
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case max
Thermal resistance junction-amb max
Maximum lead temperature for soldering
purpose
Value
TO-220/TO-247
D²PAK/I²PAK
TO-220FP
1.25
62.5
5
300
Unit
°C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj=25°C, ID=IAS, VDD= 50V)
Max value
3.5
200
Unit
A
mJ
3/17
3Pages Electrical characteristics
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 2. Thermal impedance for TO-220 /
D²PAK / I²PAK
www.DataSheet4U.com
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Safe operating area for TO-247
Figure 6. Thermal impedance for TO-247
6/17
6 Page | |||
ページ | 合計 : 17 ページ | ||
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部品番号 | 部品説明 | メーカ |
STW13NM50N | N-channel Power MOSFET | STMicroelectronics |