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IRFP3206PBF の電気的特性と機能

IRFP3206PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFP3206PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFP3206PBF Datasheet, IRFP3206PBF PDF,ピン配置, 機能
PD - 97127
IRFP3206PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
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Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
60V
2.4m:
3.0m:
ID (Silicon Limited) 200A c
S ID (Package Limited) 120A
D
S
D
G
TO-247AC
G
G ate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current d
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case j
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient j
Max.
200c
140c
120
840
280
1.9
± 20
5.0
-55 to + 175
300
10lbxin (1.1Nxm)
170
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.24
–––
Max.
0.54
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
3/3/08

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IRFP3206PBF pdf, ピン配列
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
IRFP3206PbF
4.5V
www.DataSheet4U.co1m0
0.1
4.5V
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
10
1
0.1
2.0
TJ = 25°C
VDS = 25V
60μs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
12000
10000
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
2000
Coss
Crss
0
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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10
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
20
ID= 75A
16
12
VDS= 48V
VDS= 30V
VDS= 12V
8
4
0
0 40 80 120 160 200
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3


3Pages


IRFP3206PBF 電子部品, 半導体
IRFP3206PbF
4.5
ID = 1.0A
4.0 ID = 1.0mA
3.5
ID = 250μA
ID = 150μA
3.0
2.5
2.0
1.5
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-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
18
16
14
12
10
8
6
IF = 30A
4 VR = 51V
2 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
18
16
14
12
10
8
6
IF = 45A
4 VR = 51V
2 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
350
350
300
250
200
150
100 IF = 30A
VR = 51V
50 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
300
250
200
150
100 IF = 45A
VR = 51V
50 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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共有リンク

Link :


部品番号部品説明メーカ
IRFP3206PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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