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IXFN23N100のメーカーはIXYS Corporationです、この部品の機能は「(IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET」です。 |
部品番号 | IXFN23N100 |
| |
部品説明 | (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXFN23N100ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
HiPerFETTM
Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 24N100
IXFN 23N100
VDSS
ID25
1000 V 24 A
1000 V 23 A
têê ≤ 250 ns
RDS(on)
0.39 Ω
0.43 Ω
www.DataSheet4US.cyommbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
IDM TC = 25°C; Note 1
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
T
C
= 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
24N100
23N100
24N100
23N100
1000
1000
V
V
±20 V
±30 V
24 A
23 A
96 A
92 A
24 A
60 mJ
3J
5 V/ns
600 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Symbol Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 3mA
VGS(th) VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VGS = 0V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10V, ID = 0.5 • ID25
Note 2
Characteristic Values
Min. Typ. Max.
1000
V
3.0 5.0 V
±100 nA
TJ = 25°C
TJ = 125°C
23N100
24N100
100 µA
2 mA
0.43 Ω
0.39 Ω
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
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Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
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1 Page 20
TJ = 25°C
VGS = 8-10V
7V
15
6V
10
5
5V
0
www.DataSheet4U.com 0 2 4 6 8 10
VDS - Volts
Figure 1. Output Characteristics at 25OC
20
TJ = 125°C
VGS = 10V
9V
16 8V
7V
6V
12
8
4
5V
0
0 4 8 12 16 20
VDS - Volts
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID
2.4
2.2 VGS = 10V
2.0
1.8
ID = 24A
1.6
1.4
ID = 12A
1.2
1.0
0.8
25 50 75 100 125 150
TJ - Degrees C
Figure 5. R normalized to 0.5 I value vs. T
DS(on)
D25 J
50
TJ = 25°C
40
IXFN 23N100
IXFN 24N100
VGS = 10V
9V
8V
7V
30
20
6V
10
0 5V
0 5 10 15 20 25
VCE - Volts
Figure 2. Extended Output Characteristics at 125OC
20
15
10 TJ = 125OC
TJ = 25OC
5
0
345678
VGS - Volts
Figure 4. Admittance Curves
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3Pages | |||
ページ | 合計 : 4 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXFN23N100 | (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET | IXYS Corporation |