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PDF D716 Data sheet ( Hoja de datos )
| Número de pieza | D716 | |
| Descripción | NPN Transistor - 2SD716 | |
| Fabricantes | Wing Shing Computer Components | |
| Logotipo |  |
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2SD716
SILICON EPITAXIAL PLANAR TRANSISTOR
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
QUICKwww.DataSheet4U.com REFERENCE DATA
SYMBOL PARAMETER
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VF
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
TO-3P(I)D
Tmb 25
IC = 3.0A; IB = 0.3A
IF = 3.0A
MIN MAX UNIT
- 100 V
- 100 V
- 6A
-A
- 60 W
- 2V
1.5 2.0
V
-s
CONDITIONS
VBE = 0V
Tmb 25
MIN MAX UNIT
- 100 V
- 100 V
5V
- 6A
- 1.5 A
- 60 W
-55 150
- 150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB=100V
VEB=5V
IC=1mA
IC = 3.0A; IB = 0.3A
IC = 1A; VCE = 5V
IC = 1A; VCE = 12V
VCB = 10V
MIN MAX UNIT
- 0.2 mA
- 0.2 mA
100 V
- 2V
50 250
12 - MHz
150 pF
us
us
us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: [email protected]
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet D716.PDF ] | |
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