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PDF IRFP640 Data sheet ( Hoja de datos )
| Número de pieza | IRFP640 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | LTO-DMS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRFP640 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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IRFP640
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast switching
Ease of Paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier
www.DataSheet4U.com
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
VDSS = 200V
ID = 18A
RDS(ON) =0.18Ω
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.
Pin1–Gate
Pin2–Drain
Pin3–Source
Absolute Maximum Ratings
Parameter
ID@TC=25 ْC Continuous Drain Current, VGS@10V
ID@TC=100ْC Continuous Drain Current, VGS@10V
Max.
18
11
IDM Pulsed Drain Current ①
PD@TC=25ْC Power Dissipation
72
125
Linear Derating Factor
1.0
VGS Gate-to-Source Voltage
±20
EAS Single Pulse Avalanche Energy ②
580
IAR Avalanche Current ①
18
EAR Repetitive Avalanche Energy ①
13
dv/dt Peak Diode Recovery dv/dt ③
5.0
TJ
TSTG
Operating Junction and
Storage Temperature Range
–55 to +150
Soldering Temperature, for 10 seconds 300(1.6mm from case)
Mounting Torque,6-32 or M3 screw
10 Ibf●in(1.1N●m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
RθCS
RθJA
Junction-to-case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
—
—
—
— 1.0
0.50 —
— 62
Units
A
W
W/ ْC
V
mJ
A
mJ
V/ns
ْC
Units
ْC/W
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRFP640.PDF ] | |
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