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PDF 27C16 Data sheet ( Hoja de datos )
| Número de pieza | 27C16 | |
| Descripción | UV Erasable CMOS PROM Military Qualified | |
| Fabricantes | National Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 27C16 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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January 1989
27C16
16 384-Bit (2048 x 8) UV Erasable CMOS PROM
Military Qualified
www.DataSheet4U.com
General Description
The 27C16 is a high speed 16K UV erasable and electrically
reprogrammable CMOS EPROM ideally suited for applica-
tions where fast turnaround pattern experimentation and
low power consumption are important requirements
The 27C16 is packaged in a 24-pin dual-in-line package with
transparent lid The transparent lid allows the user to ex-
pose the chip to ultraviolet light to erase the bit pattern A
new pattern can then be written into the device by following
the programming procedure
This EPROM is fabricated with the reliable high volume
time proven P2CMOSTM silicon gate technology
The 27C16 specified on this data sheet is fully compliant
with MIL-STD-883 Revision C
Features
Y Access time down to 450 ns
Y Low CMOS power consumption
Active Power 26 25 mW max
Standby Power 0 53 mW max (98% savings)
Y Performance compatible to NSC800TM CMOS micro-
processor
Y Single 5V power supply
Y Pin compatible to MM2716 and higher density EPROMs
Y Static no clocks required
Y TTL compatible inputs outputs
Y TRI-STATE output
Y Windowed DIP Package
Y Specifications guaranteed over full military temperature
range (b55 C to a125 C)
Block Diagram
Pin Names
A0 – A10
Addresses
CE Chip Enable
OE Output Enable
O0 – O7
PGM
Outputs
Program
NC No Connect
TL D 10329 – 1
TRI-STATE is a registered trademark of National Semiconductor Corporation
NS800TM are P2CMOSTM trademarks of National Semiconductor Corporation
C1995 National Semiconductor Corporation TL D 10329
RRD-B30M105 Printed in U S A
1 page  
PROGRAMMING CHARACTERISTICS (Note 1)
DC Programming Characteristics (Notes 2 3)
(TA e a25 C g5 C VCC e 5V g10% VPP e 25V g1V)
Symbol
Parameter
Conditions
Min Typ Max Units
ILI
Input Current (for Any Input)
VIN e VCC or GND
IPP
VPP Supply Current during
CE PGM e VIH
Programming Pulse
10 mA
30 mA
ICC VCC Supply Current
VIL Input Low Level
VIH Input High Level
b0 1
20
10
08
VCC a1
mA
V
V
AC Programming Characteristics (Notes 2 3)
www.DataSheet4U.com (TA e a25 C g5 C VCC e 5V g10% VPP e 25V g1V)
Symbol
Parameter
Conditions
Min Typ Max Units
tAS
tOES
tDS
tAH
tOEH
tDH
tDF
tOE
tPW
tPRT
tPFT
Address Setup Time
OE Setup Time
Data Setup Time
Address Hold Time
OE Hold Time
Data Hold Time
Output Enable to Output Float Delay
Output Enable to Output Delay
Program Pulse Width
Program Pulse Rise Time
Program Pulse Fall Time
CE PGM e VIL
CE PGM e VIL
2
2
2
2
2
2
0
45
5
5
120
100
50 55
ms
mS
ms
ms
ms
ms
ns
ns
ms
ns
ns
AC Test Conditions
VCC
VPP
Input Rise and Fall Times
Input Pulse Levels
5V g10%
25V g1V
s20 ns
0 8V to 2 2V
Timing Measurement Reference Level
Inputs
Outputs
1V and 2V
0 8V and 2V
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 27C16.PDF ] | |
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