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PDF NE5532 Data sheet ( 特性 )

部品番号 NE5532
部品説明 Internally Compensated Dual Low Noise Operational Amplifier
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 

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NE5532 Datasheet, NE5532 PDF,ピン配置, 機能
NE5532, SA5532, SE5532,
NE5532A, SE5532A
Internally Compensated
Dual Low Noise
Operational Amplifier
The 5532 is a dual high-performance low noise operational
amplifier. Compared to most of the standard operational amplifiers,
such as the 1458, it shows better noise performance, improved output
drive capability and considerably higher small-signal and power
bandwidths.
This makes the device especially suitable for application in
high-quality and professional audio equipment, instrumentation and
control circuits, and telephone channel amplifiers. The op amp is
internally compensated for gains equal to one. If very low noise is of
prime importance, it is recommended that the 5532A version be used
because it has guaranteed noise voltage specifications.
Features
Small-Signal Bandwidth: 10 MHz
Output Drive Capability: 600 W, 10 VRMS
Input Noise Voltage: 5.0 nVń ǸHz (Typical)
DC Voltage Gain: 50000
AC Voltage Gain: 2200 at 10 kHz
Power Bandwidth: 140 kHz
Slew Rate: 9.0 V/ms
Large Supply Voltage Range: "3.0 to "20 V
Compensated for Unity Gain
PbFree Packages are Available
© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 2
1
http://onsemi.com
8
1
SOIC8
D SUFFIX
CASE 751
8
1
PDIP8
N SUFFIX
CASE 626
16
1
SOIC16 WB
D SUFFIX
CASE 751G
PIN CONNECTIONS
N, D8 Packages
OUTA 1
INA 2
+INA 3
V- 4
A
B
Top View
8 V+
7 OUTB
6 INB
5 +INB
D Package*
INA
+INA
NC
1
2
3
V4
NC 5
NC 6
+INB
INB
7
8
16 NC
15 NC
14 NC
13 OUTA
12 V+
11 OUTB
10 NC
9 NC
Top View
*SOL and non-standard pinout.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 6 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Publication Order Number:
NE5532/D

1 Page





NE5532 pdf, ピン配列
NE5532, SA5532, SE5532, NE5532A, SE5532A
DC ELECTRICAL CHARACTERISTICS (Tamb = 25°C; VS = "15 V, unless otherwise noted.) (Notes 2, 3 and 4)
SE5532/A
NE5532/A, SA5532
Characteristic
Symbol
Test Conditions
Min Typ Max Min Typ Max Unit
Offset Voltage
VOS − − 0.5 2.0 0.5 4.0 mV
Overtemperature
− − 3.0 − − 5.0 mV
Offset Current
DVOS/DT
IOS
Overtemperature
5.0 − − 5.0 mV/°C
100
10 150 nA
− − 200 − − 200 nA
Input Current
DIOS/DT
IB
Overtemperature
200 − − 200 pA/°C
300 500 300 800 nA
− − 700 − − 1000 nA
Supply Current
DIB/DT
ICC
Overtemperature
5.0 − − 5.0 nA/°C
8.0 10.5 8.0 16 mA
− − 13 − − −
Common-Mode Input Range
Common-Mode Rejection Ratio
VCM
CMRR
"12 "13 "12 "13
V
80 100 70 100
dB
Power Supply Rejection Ratio
PSRR
10 50
10 100 mV/V
Large-Signal Voltage Gain
AVOL
RL w 2.0 kW; VO = "10 V 50 100 25 100
Overtemperature
25 − − 15
V/mV
RL w 600 W; VO = "10 V
40
50
15
50
Overtemperature
20 − − 10
Output Swing
VOUT
RL w 600 W
Overtemperature
"12 "13 "12 "13
"10 "12 "10 "12
V
RL w 600 W; VS = "18 V "15 "16 "15 "16
Overtemperature
"12 "14 "12 "14
RL w 2.0 kW
Overtemperature
"13 "13.5
"12 "12.5
"13 "13.5
"10 "12.5
Input Resistance
RIN
30 300 30 300
kW
Output Short Circuit Current
ISC
10 38 60 10 38 60 mA
2. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential input
voltage exceeds 0.6 V. Maximum current should be limited to "10 mA.
3. For operation at elevated temperature, derate packages based on the package thermal resistance.
4. Output may be shorted to ground at VS = "15 V, Tamb = 25°C. Temperature and/or supply voltages must be limited to ensure dissipation rating
is not exceeded.
http://onsemi.com
3


3Pages


NE5532 電子部品, 半導体
NE5532, SA5532, SE5532, NE5532A, SE5532A
RS
25 W
VI
+
5532 (1/2)
RF
RE 100 pF
800 W
VIN
1 kW
V+
5532
+
100 pF
V
VOUT
600 W
Closed-Loop Frequency Response
Figure 10. Test Circuits
Voltage-Follower
8
N5532
ALYWA
G
1
8
N5532
ALYW
G
1
8
S5532
ALYWA
G
1
SOIC8
D SUFFIX
CASE 751
MARKING DIAGRAMS
NE5532AN
AWL
YYWWG
NE5532N
AWL
YYWWG
SA5532N
AWL
YYWWG
16
NE5532D
AWLYYWWG
1
SOIC16 WB
D SUFFIX
CASE 751G
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = PbFree Packagee
PDIP8
N SUFFIX
CASE 626
SE5532N
AWL
YYWWG
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6

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