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IXGT50N60B2のメーカーはIXYS Corporationです、この部品の機能は「(IXGx50N60B2) HiPerFASTTM IGBT B2-Class High Speed IGBTs」です。 |
部品番号 | IXGT50N60B2 |
| |
部品説明 | (IXGx50N60B2) HiPerFASTTM IGBT B2-Class High Speed IGBTs | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXGT50N60B2ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
HiPerFASTTM IGBT
B2-Class High Speed IGBTs
IXGH 50N60B2
IXGT 50N60B2
VCES
IC25
VCE(sat)
tfi typ
= 600 V
= 75 A
= 2.0 V
= 65 ns
www.DataSheetS4Uym.cobmol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600V
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (TO-247)
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
50 A
200 A
ICM = 80
A
400
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 40 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.0 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 125°C
50 µA
1 mA
±100 nA
1.6 2.0 V
1.5 V
TO-247
(IXGH)
TO-268
(IXGT)
G
CE
G
E
C (TAB)
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z High frequency IGBT
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
© 2004 IXYS All rights reserved
DS99145A(03/04)
1 Page Fig. 1. Output Characte ristics
@ 25 Deg. C
80
VGE = 15V
9V
70 13V
11V
60
7V
50
40
30
20
www.DataSheet4U.com
10
0
0.5
6V
5V
1 1.5 2
VC E - Volts
2.5
3
Fig. 3. Output Characteristics
@ 125 Deg. C
80
VGE = 15V
9V
70 13V
11V
60 7V
50
40 6V
30
20
10 5V
0
0.5 1 1.5 2 2.5 3
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
3.7
TJ = 25ºC
3.4
3.1
2.8
IC = 80A
40A
20A
2.5
2.2
1.9
1.6
1.3
5 6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
© 2004 IXYS All rights reserved
IXGH 50N60B2
IXGT 50N60B2
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
320
280
VGE = 15V
13V
11V
240
200 9V
160
120 7V
80
40
5V
0
0 1 2 3 45 6 7 8
VC E - Volts
Fig. 4. De pende nce of VCE(sat) on
Tem perature
1.4
1.3 VGE = 15V
1.2 IC = 80A
1.1
1.0
0.9 IC = 40A
0.8
0.7
0.6
-50
-25
IC = 20A
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Adm ittance
200
180
160
140
120
100
80
60
TJ = 125ºC
25ºC
40 -40ºC
20
0
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
VG E - Volts
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXGT50N60B | (IXGx50N60B) HiPerFAST IGBT | IXYS Corporation |
IXGT50N60B2 | (IXGx50N60B2) HiPerFASTTM IGBT B2-Class High Speed IGBTs | IXYS Corporation |