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PDF N64T1630C1B Data sheet ( Hoja de datos )
| Número de pieza | N64T1630C1B | |
| Descripción | 64Mb Ultra-Low Power Asynchronous CMOS PSRAM | |
| Fabricantes | NanoAmp Solutions | |
| Logotipo |  |
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NanoAmp Solutions, Inc.
670 N. McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N64T1630C1B
Advance Information
64Mb Ultra-Low Power Asynchronous CMOS PSRAM
4M × 16 Bits
Overview
The N64T1630C1B is an integrated memory
device containing a 64 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 4,194,304 words by 16 bits. It is
designed to be compatible in operation and
www.DataSheet4U.cinomterface to standard 6T SRAMS. The device is
designed for low standby and operating current
and includes a power-down feature to
automatically enter standby mode. The device
includes a ZZ input for deep sleep as well as
several other power saving modes: Partial Array
Self Refresh mode where data is retained in a
portion of the array and Temperature
Compensated Refresh. Both these modes reduce
standby current drain. The N64T1630C1B can be
operated in a standard asynchronous mode and
data can also be read in a 4-word page mode for
fast access times. The die has separate power
rails, VccQ and VssQ for the I/O to be run from a
separate power supply from the device core.
Features
• Dual voltage rails for optimum power & per-
formance
Vcc - 2.7V - 3.3V
Vccq - 2.7V to 3.3V
• Fast Cycle Times
TACC < 70 nS (60ns future)
TPACC < 25 nS
• Very low standby current
ISB < 170µA
• Very low operating current
Icc < 25mA
• PASR (Partial Array Self Refresh)
• TCR (Temperature Compensated Refresh)
Table 1: Product Family
Part Number
Package Operating
Type
Temperature
N64T1630C1BZ
BGA
-25oC to +85oC
Ball Congiguration
123456
A LB OE A0 A1 A2 ZZ
B I/O8 UB A3 A4 CE I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSSQ I/O11 A17 A7 I/O3 VCC
E VCCQ I/O12 A21 A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 A19 A12 A13 WE I/O7
H A18 A8
A9 A10 A11 A20
48 Pin BGA (top view)
6 x 8 mm
Power
Supply
I/O Supply
2.7 - 3.3V
2.7 - 3.3V
Ball Description
Speed
70ns
Standby
Current (ISB),
Max
170µA
Pin Name
A0-A21
WE
CE
ZZ
OE
LB
UB
I/O0-I/O15
VCC
VSS
VCCQ
VSSQ
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Deep Sleep Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Power I/O only
Ground I/O only
Stock No. 23357- Rev E 07/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
1 page  
NanoAmp Solutions, Inc.
Table 8: Timings
Item
Read Cycle Time
Page Mode Cycle Time
Address Access Time
Page Mode Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
w
w
w
.
D
a
taS
Read
h
e
e
t
B4 yteUSe.lecct tooValmid Output
Cycle
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write
Cycle
Write Cycle Time
Page Mode Max Write Cycle
Chip Enable Active Time
Chip Enable HIGH Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Chip Enable to Low-Z
Write Pulse Width
Write Recovery Time
Write to High-Z Output
Address Setup Time
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
WE High Time
Page Write Cycle Time
Page Mode Data to Write Time Overlap
Page Mode Data Hold From Write Time
N64T1630C1B
Advance Information
Symbol
tRC
tPC
tAA
tPA
tCO
tOE
tBO
tLZ
tOLZ
tBLZ
tHZ
tOHZ
tBHZ
tOH
tWC
tPGMAX
tCE
tCEH
tCW
tAW
tBW
tLZ
tWP
tWR
tWHZ
tAS
tDW
tDH
tOW
tWEH
tPWC
tPDW
tPDH
-70
Min Max
70 20k
25
70
25
70
20
70
10
5
10
08
08
08
5
70 20k
20k
20k
5
70
70
70
10
45
0
08
0
25
0
5
7.5
25
20
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Stock No. 23357- Rev E 07/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
5 Page 
NanoAmp Solutions, Inc.
Figure 10: Timing Waveform of Page Mode Write Cycle
Page Address
(A4 - A21)
Word Address
(A0 - A3)
www.DataSheet4U.com
CE
tWC
tAS
tCW
tPGMAX
tPWC
N64T1630C1B
Advance Information
tCEH
tWP
WE
LB, UB
Data In
tLBW, tUBW
High-Z
tDW tDH tPDW tPDH
tPDW tPDH
tPGMAX means any page address (A4-A21) must be changed at least once in a 20us period
Stock No. 23357- Rev E 07/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
11
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| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet N64T1630C1B.PDF ] | |
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