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Datasheet 20N60C3 PDF ( 特性, スペック, ピン接続図 )

部品番号 20N60C3
部品説明 HGTG20N60C3
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 
プレビュー
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20N60C3 Datasheet, 20N60C3 PDF,ピン配置, 機能
Data Sheet
HGTG20N60C3, HGTP20N60C3,
HGT1S20N60C3S
January 2000 File Number 4492.2
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
www.DataSheaept4pUlic.caotimons operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49178.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60C3
TO-247
G20N60C3
HGTP20N60C3
TO-220AB
G20N60C3
HGT1S20N60C3S
TO-263AB
G20N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3S9A.
Symbol
C
G
E
Features
• 45A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-220AB (ALTERNATE VERSION)
EC
G
COLLECTOR
(FLANGE)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

1 Page



20N60C3 pdf, ピン配列
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10
L = 1mH
Test Circuit (Figure 17)
MIN TYP MAX UNITS
- 28 32 ns
- 24 28 ns
- 280 450 ns
- 108 210 ns
- 380 410 µJ
- 1.0 1.1 mJ
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
NOTES:
EOFF
RθJC
- 1.2 1.7 mJ
-
-
0.76
oC/W
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
www.DataSheet4Uat.cthoempoint where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17.
Typical Performance Curves Unless Otherwise Specified
50
VGE = 15V
40
30
20
10
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
140
TJ = 150oC, RG = 10, VGE = 15V, L = 100µH
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 10,
100 L = 1mH, VCE = 480V
TC
75oC
75oC
110oC
110oC
VGE
15V
10V
15V
10V
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.76oC/W, SEE NOTES
1
2 5 10
20
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
14
VCE = 360V, RG = 10, TJ = 125oC
12
10
450
400
ISC
350
8 300
6 250
4 200
tSC
2 150
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3


3Pages


20N60C3 電子部品, 半導体
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Typical Performance Curves Unless Otherwise Specified (Continued)
100 0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
SINGLE PULSE
www.DataSheet4U.co1m0-130-5
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
PD
10-3
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
t1
t2
Test Circuit and Waveforms
101
RHRP3060
RG = 10
L = 1mH
+
VDD = 480V
-
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
VCE
ICE
90%
EOFF
10%
EON2
90%
10%
td(OFF)I tfI
trI
td(ON)I
FIGURE 18. SWITCHING TEST WAVEFORMS
6

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