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Número de pieza | AP9928GEO | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP9928GEO (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP9928GEO
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
▼ Capable of 2.5V gate drive
www.DataSheet4U.c▼om Optimal DC/DC battery application
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
BVDSS
RDS(ON)
ID
20V
23mΩ
5A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
20
±12
5
3.5
25
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
125
Unit
℃/W
Data and specifications subject to change without notice
200206031
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AP9928GEO.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP9928GEO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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