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U5196NL の電気的特性と機能

U5196NLのメーカーはVishay Intertechnologyです、この部品の機能は「(U5196NL - U5199NL) Monolithic N-channel JFET Duals」です。


製品の詳細 ( Datasheet PDF )

部品番号 U5196NL
部品説明 (U5196NL - U5199NL) Monolithic N-channel JFET Duals
メーカ Vishay Intertechnology
ロゴ Vishay Intertechnology ロゴ 




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U5196NL Datasheet, U5196NL PDF,ピン配置, 機能
New Product
SST/U5196NL Series
Vishay Siliconix
Monolithic N-Channel JFET Duals
SST5198NL
SST5199NL
U5196NL
U5197NL
U5198NL
U5199NL
PRODUCT SUMMARY
Part Number
U5196NL
U5197NL
www.DataSheet4U.com
SST/U5198NL
SST/U5199NL
VGS(off) (V)
-0.7 to -4
-0.7 to -4
-0.7 to -4
-0.7 to -4
V(BR)GSS Min (V)
- 50
- 50
- 50
- 50
gfs Min (mS)
1
1
1
1
IG Max (pA)
- 15
- 15
- 15
- 15
jVGS1 - VGS2j Max (mV)
5
5
10
15
FEATURES
D Anti Latchup Capability
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 5 pA
D Low Noise
D High CMRR: 100 dB
BENEFITS
D External Substrate Bias—Avoids Latchup
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
APPLICATIONS
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High Speed Comparators
D Impedance Converters
DESCRIPTION
The SST/U5196NL series of JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with IG guaranteed at VDG = 20 V.
Pins 4 and 8 of the SST series and pin 4 on the U series part
numbers enable the substrate to be connected to a positive,
external bias (VDD) to avoid latchup.
Narrow Body SOIC
The U series in the hermetically-sealed TO-78 package is
available with full military processing. The SST series SO-8
package provides ease of manufacturing and the symmetrical
pinout prevents improper orientation. The SO-8 package is
available with tape-and-reel options for compatibility with
automatic assembly methods.
For similar products see the low-noise SST/U401NL series
and the low-leakage U421NL/423NL data sheets.
TO-78
S1
D1
G1
SUBSTRATE
1
2
3
4
8 SUBSTRATE
7 G2
6 D2
5 S2
S1
1
D1 2
G2
7
6 D2
Top View
Marking Codes:
SST5198NL - 5198NL
SST5199NL - 5199NL
3
G1
5
4 S2
CASE, SUBSTRATE
Top View
U5196NL, U5198NL
U5197NL, U5199NL
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C
Document Number: 72156
S-03468—Rev. B, 11-Mar-03
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 85_C
b. Derate 4 mW/_C above 85_C
www.vishay.com
7-1

1 Page





U5196NL pdf, ピン配列
New Product
SST/U5196NL Series
Vishay Siliconix
SPECIFICATIONS FOR SST/U5198NL AND SST/U5199NL
(TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
www.DataSheeGt4aUte.cRoemverse Current
Gate Operating Current
Gate-Source Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
Noise Figure
Matching
Symbol
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
VGS
gfs
gos
gfs
gos
Ciss
Crss
en
NF
Test Conditions
IG = -1 mA, VDS = 0 V
VDS = 20 V, ID = 1 nA
VDS = 20 V, VGS = 0 V
VGS = - 30 V, VDS = 0 V
TA = 150_C
VDG = 20 V, ID = 200 mA
TA =125_C
VDG = 20 V, ID = 200 mA
VDS = 20 V, VGS = 0 V, f = 1 kHz
VDS = 20 V, ID = 200 mA
f = 1 kHz
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 0 V, f = 1 kHz
VDS = 20 V, VGS = 0 V
f = 100 Hz, RG = 10 MW (U Only)
Typa
Limits
SST/U5198NL SST/U5199NL
Min Max Min Max
Unit
-57 -50
- 50
-2 -0.7 -4 -0.7 -4
3 0.7 7 0.7 7
-10 -25 -25
-20 -50 -50
-5 -15 -15
-0.8 - 15 - 15
-1.5 -0.2 -3.8 -0.2 -3.8
V
mA
pA
nA
pA
nA
V
3.0 1 4 1 4
8 50 50
0.8 0.7 1.6 0.7 1.6
1 44
3 66
1 22
11
0.5
mS
mS
mS
mS
pF
nV
Hz
dB
Differential Gate-Source Voltage
|VGS1–VGS2|
VDG = 20 V, ID = 200 mA
10 15 mV
Gate-Source Voltage Differential
Change with Temperature
Saturation Drain Current Ratio
Transconductance Ratio
Differential Output Conductance
D|VGS1–VGS2|
DT
D|V V
IDSS1
IDSS2
|
gfs1
gfs2
|gos1gos2|
SST5198NL 15
VDG = 20 V, ID = 200 mA
TA = -55 to 125_C
SST5199NL
30
mV/_C
U Only
20 40
SST Only 0.97
VDS = 20 V, VGS = 0 V
U Only
0.95 1 0.95 1
SST Only 0.97
VDS = 20 V, ID = 200 mA
U Only
0.95 1 0.95 1
f = 1 kHz
SST Only
0.2
mS
U Only
11
Differential Gate Current
Common Mode Rejection Ratio
|IG1 * IG2|
CMRR
VDG = 20 V, ID = 200 mA,
TA = 125_C
SST Only
U Only
VDG = 10 to 20 V, ID = 200 mA
0.1
97
5
nA
5
dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
NQP
Document Number: 72156
S-03468—Rev. B, 11-Mar-03
www.vishay.com
7-3


3Pages


U5196NL 電子部品, 半導体
SST/U5196NL Series
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
f = 1 MHz
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
f = 1 MHz
84
6
www.DataSheet4U.com 4
2
VDS = 0 V
5V
15 V
20 V
0
0 -4
-8 -12 -16
VGS - Gate-Source Voltage (V)
- 20
Equivalent Input Noise Voltage vs. Frequency
20
VDS = 20 V
16
ID @ 200 mA
12
3 VDS = 0 V
5V
2
15 V
1
20 V
0
0 -4 -8 -12 -16 -20
VGS - Gate-Source Voltage (V)
Output Conductance vs. Drain Current
2.5
VGS(off) = - 2 V
VDS = 20 V
f = 1 kHz
2.0
TA = -55_C
1.5
8 VGS = 0 V
4
0
10
100 1 k 10 k
f - Frequency (Hz)
100 k
Common-Source Forward Transconductance
vs. Drain Current
2.5
VGS(off) = - 2 V
2.0
VDS = 20 V
f = 1 kHz
TA = -55_C
1.5
25_C
1.0
0.5
0
0.01
www.vishay.com
7-6
125_C
0.1
ID - Drain Current (mA)
1
1.0 25_C
0.5
125_C
0
0.01
0.1
ID - Drain Current (mA)
1
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1 k 10
800 gos 8
600 6
400 4
rDS
200
0
0
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz
-1 -2 -3 -4
VGS(off) - Gate-Source Cutoff Voltage (V)
2
0
-5
Document Number: 72156
S-03468—Rev. B, 11-Mar-03

6 Page



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部品番号部品説明メーカ
U5196NL

(U5196NL - U5199NL) Monolithic N-channel JFET Duals

Vishay Intertechnology
Vishay Intertechnology


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