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PDF IXFT58N20Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT58N20Q | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Qg
www.DataSheetP4Ure.cliomminary data sheet
IXFH 58N20Q
IXFT 58N20Q
VDSS =
ID25 =
=RDS(on)
200 V
58 A
40 mW
trr £ 200 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
200 V
200 V
±20 V
±30 V
58 A
232 A
58 A
30 mJ
1.0 J
5 V/ns
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 4 mA
2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
1 mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
40 m Ω
TO-268 (D3) (IXFT) Case Style
G
S
TO-247 AD
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l IXYS advanced low Qg process
l International standard packages
l Low gate charge and capacitance
- easier to drive
- faster switching
l Low RDS (on)
l Unclamped Inductive Switching (UIS)
rated
l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l Easy to mount
l Space savings
l High power density
© 1999 IXYS All rights reserved
98523A (5/99)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFT58N20Q.PDF ] | |
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