|
|
PDF UPA1744TP Data sheet ( Hoja de datos )
| Número de pieza | UPA1744TP | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de UPA1744TP (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1744TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA1744TP is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics, and
www.DataSheet4U.cdoemsigned for high voltage applications such as DC/DC converter.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8, 9: Drain
FEATURES
• Low on-state resistance
RDS(on) = 30 mΩ MAX. (VGS = 10 V, ID = 5.0 A)
• Low input capacitance
Ciss = 3400 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in gate protection diode
• Small and surface mount package (Power HSOP8)
14
5.2
+0.17
–0.2
0.8 ±0.2
S
6.0 ±0.3
4.4 ±0.15
1.27 TYP.
0.40
+0.10
–0.05
14
0.12 M
0.10 S
ORDERING INFORMATION
PART NUMBER
µ PA1744TP
PACKAGE
Power HSOP8
2.0 ±0.2
9
4.1 MAX.
85
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, all terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Note2
Channel Temperature
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
±20
±10
±30
39
3.0
150
V
A EQUIVALENT CIRCUIT
A
Drain
W
W
°C Gate
Body
Diode
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
−55 to +150
°C
IAS 10 A
EAS 10 mJ
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
3. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16410EJ1V0DS00 (1st edition)
Date Published March 2003 NS CP(K)
Printed in Japan
2002
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
60
VGS = 10 V
ID = 5.0 A
50 Pulsed
40
30
20
10
www.DataSheet4U.com
0
-25
0 25 50 75 100 125 150
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 50 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
tr
tf
1
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 0 V
P u ls e d
10
1
0.1
0.01
0
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
µ PA1744TP
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C iss
1000
C oss
100
C rss
VGS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
120
110
100
90
80
70
60
50
40
30
20
10
0
0
VDD = 80 V
50 V
20 V
ID = 10 A
12
10
8
VGS
6
4
VDS
10 20 30 40 50 60
QG - Gate Charge - nC
2
0
70
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/µs
VGS = 0 V
10
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet G16410EJ1V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet UPA1744TP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| UPA1744TP | SWITCHING N-CHANNEL POWER MOSFET | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |